Sputtering pressure effects on magnetization reversal mechanism and magnetic switching volumes of CoSm/Cr films

Soon Young Jeong; Sung Bong Kim; Sang In Kim; Z. S. Shan; David J. Sellmyer

doi:10.1143/jjap.41.5145

Sputtering pressure effects on magnetization reversal mechanism and magnetic switching volumes of CoSm/Cr films

Soon Young Jeong, Sung Bong Kim, Sang In Kim, Z. S. Shan, David J. Sellmyer

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The sputtering pressure effects on magnetization reversal and magnetic switching volumes of CoSm/Cr films have been investigated. It is found that the magnetization reversal changed from wall pinning for samples prepared at low pressure to single particle rotation for samples prepared at high pressure. The magnetic switching volumes increased with increasing the Ar pressure to values in the range of 5.2-9.0 × 10^-18 cm³. These switching volumes satisfy Sharrock's requirement for the thermal stability of high-density magnetic recording.

Original language	English (US)
Pages (from-to)	5145-5148
Number of pages	4
Journal	Japanese Journal of Applied Physics
Volume	41
Issue number	8
DOIs	https://doi.org/10.1143/jjap.41.5145
State	Published - Aug 2002
Externally published	Yes

Keywords

CoSm film
Irreversible susceptibility
Magnetic viscosity
Magnetization reversal mechanism
Switching volume
dc magnetron sputtering

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

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10.1143/jjap.41.5145

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title = "Sputtering pressure effects on magnetization reversal mechanism and magnetic switching volumes of CoSm/Cr films",

abstract = "The sputtering pressure effects on magnetization reversal and magnetic switching volumes of CoSm/Cr films have been investigated. It is found that the magnetization reversal changed from wall pinning for samples prepared at low pressure to single particle rotation for samples prepared at high pressure. The magnetic switching volumes increased with increasing the Ar pressure to values in the range of 5.2-9.0 × 10-18 cm3. These switching volumes satisfy Sharrock's requirement for the thermal stability of high-density magnetic recording.",

keywords = "CoSm film, Irreversible susceptibility, Magnetic viscosity, Magnetization reversal mechanism, Switching volume, dc magnetron sputtering",

author = "Jeong, {Soon Young} and Kim, {Sung Bong} and Kim, {Sang In} and Shan, {Z. S.} and Sellmyer, {David J.}",

year = "2002",

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journal = "Japanese Journal of Applied Physics",

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AU - Jeong, Soon Young

AU - Kim, Sung Bong

AU - Kim, Sang In

AU - Shan, Z. S.

AU - Sellmyer, David J.

PY - 2002/8

Y1 - 2002/8

N2 - The sputtering pressure effects on magnetization reversal and magnetic switching volumes of CoSm/Cr films have been investigated. It is found that the magnetization reversal changed from wall pinning for samples prepared at low pressure to single particle rotation for samples prepared at high pressure. The magnetic switching volumes increased with increasing the Ar pressure to values in the range of 5.2-9.0 × 10-18 cm3. These switching volumes satisfy Sharrock's requirement for the thermal stability of high-density magnetic recording.

AB - The sputtering pressure effects on magnetization reversal and magnetic switching volumes of CoSm/Cr films have been investigated. It is found that the magnetization reversal changed from wall pinning for samples prepared at low pressure to single particle rotation for samples prepared at high pressure. The magnetic switching volumes increased with increasing the Ar pressure to values in the range of 5.2-9.0 × 10-18 cm3. These switching volumes satisfy Sharrock's requirement for the thermal stability of high-density magnetic recording.

KW - CoSm film

KW - Irreversible susceptibility

KW - Magnetic viscosity

KW - Magnetization reversal mechanism

KW - Switching volume

KW - dc magnetron sputtering

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JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

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ER -

Sputtering pressure effects on magnetization reversal mechanism and magnetic switching volumes of CoSm/Cr films

Abstract

Keywords

ASJC Scopus subject areas

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