Sputtering pressure effects on magnetization reversal mechanism and magnetic switching volumes of CoSm/Cr films

Soon Young Jeong, Sung Bong Kim, Sang In Kim, Z. S. Shan, David J. Sellmyer

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

The sputtering pressure effects on magnetization reversal and magnetic switching volumes of CoSm/Cr films have been investigated. It is found that the magnetization reversal changed from wall pinning for samples prepared at low pressure to single particle rotation for samples prepared at high pressure. The magnetic switching volumes increased with increasing the Ar pressure to values in the range of 5.2-9.0 × 10-18 cm3. These switching volumes satisfy Sharrock's requirement for the thermal stability of high-density magnetic recording.

Original languageEnglish (US)
Pages (from-to)5145-5148
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume41
Issue number8
StatePublished - Aug 1 2002

    Fingerprint

Keywords

  • CoSm film
  • Irreversible susceptibility
  • Magnetic viscosity
  • Magnetization reversal mechanism
  • Switching volume
  • dc magnetron sputtering

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this