Strain and composition dependence of the E1(TO) mode in hexagonal Al1-xInxN thin films

A. Kasic; M. Schubert; J. Off; F. Scholz

doi:10.1063/1.1355010

Strain and composition dependence of the E₁(TO) mode in hexagonal Al_1-xIn_xN thin films

A. Kasic, M. Schubert, J. Off, F. Scholz

Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

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Abstract

Infrared spectroscopic ellipsometry is used to study the influence of strain and composition on the transverse-optical phonon mode of E₁ symmetry in hexagonal Al_1-xIn_xN films for 0.12≤x ≤0.21. The 0.1-0.2-μm thick films were grown on slightly compressively strained hexagonal GaN buffer layers, or directly on [0001] sapphire by metalorganic vapor phase epitaxy. The Al_1-xIn_xN E₁(TO) phonon shows a one-mode behavior in contrast to recent theoretical predictions [H. Grille, C. Schnittler, and F. Bechstedt, Phys. Rev. B 61, 6091 (2000)]. Films grown on GaN reveal the influence of strain on the phonon mode frequencies due to pseudomorphic film growth. Al_1-xIn_xN deposited directly on sapphire possesses phonon modes which indicate fully relaxed film growth.

Original language	English (US)
Pages (from-to)	1526-1528
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	11
DOIs	https://doi.org/10.1063/1.1355010
State	Published - Mar 12 2001

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1355010

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title = "Strain and composition dependence of the E1(TO) mode in hexagonal Al1-xInxN thin films",

abstract = "Infrared spectroscopic ellipsometry is used to study the influence of strain and composition on the transverse-optical phonon mode of E1 symmetry in hexagonal Al1-xInxN films for 0.12≤x ≤0.21. The 0.1-0.2-μm thick films were grown on slightly compressively strained hexagonal GaN buffer layers, or directly on [0001] sapphire by metalorganic vapor phase epitaxy. The Al1-xInxN E1(TO) phonon shows a one-mode behavior in contrast to recent theoretical predictions [H. Grille, C. Schnittler, and F. Bechstedt, Phys. Rev. B 61, 6091 (2000)]. Films grown on GaN reveal the influence of strain on the phonon mode frequencies due to pseudomorphic film growth. Al1-xInxN deposited directly on sapphire possesses phonon modes which indicate fully relaxed film growth.",

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T1 - Strain and composition dependence of the E1(TO) mode in hexagonal Al1-xInxN thin films

AU - Kasic, A.

AU - Schubert, M.

AU - Off, J.

AU - Scholz, F.

PY - 2001/3/12

Y1 - 2001/3/12

N2 - Infrared spectroscopic ellipsometry is used to study the influence of strain and composition on the transverse-optical phonon mode of E1 symmetry in hexagonal Al1-xInxN films for 0.12≤x ≤0.21. The 0.1-0.2-μm thick films were grown on slightly compressively strained hexagonal GaN buffer layers, or directly on [0001] sapphire by metalorganic vapor phase epitaxy. The Al1-xInxN E1(TO) phonon shows a one-mode behavior in contrast to recent theoretical predictions [H. Grille, C. Schnittler, and F. Bechstedt, Phys. Rev. B 61, 6091 (2000)]. Films grown on GaN reveal the influence of strain on the phonon mode frequencies due to pseudomorphic film growth. Al1-xInxN deposited directly on sapphire possesses phonon modes which indicate fully relaxed film growth.

AB - Infrared spectroscopic ellipsometry is used to study the influence of strain and composition on the transverse-optical phonon mode of E1 symmetry in hexagonal Al1-xInxN films for 0.12≤x ≤0.21. The 0.1-0.2-μm thick films were grown on slightly compressively strained hexagonal GaN buffer layers, or directly on [0001] sapphire by metalorganic vapor phase epitaxy. The Al1-xInxN E1(TO) phonon shows a one-mode behavior in contrast to recent theoretical predictions [H. Grille, C. Schnittler, and F. Bechstedt, Phys. Rev. B 61, 6091 (2000)]. Films grown on GaN reveal the influence of strain on the phonon mode frequencies due to pseudomorphic film growth. Al1-xInxN deposited directly on sapphire possesses phonon modes which indicate fully relaxed film growth.

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Strain and composition dependence of the E₁(TO) mode in hexagonal Al_1-xIn_xN thin films

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