Strain and composition dependence of the E1(TO) mode in hexagonal Al1-xInxN thin films

A. Kasic, M. Schubert, J. Off, F. Scholz

Research output: Contribution to journalArticle

23 Scopus citations

Abstract

Infrared spectroscopic ellipsometry is used to study the influence of strain and composition on the transverse-optical phonon mode of E1 symmetry in hexagonal Al1-xInxN films for 0.12≤x ≤0.21. The 0.1-0.2-μm thick films were grown on slightly compressively strained hexagonal GaN buffer layers, or directly on [0001] sapphire by metalorganic vapor phase epitaxy. The Al1-xInxN E1(TO) phonon shows a one-mode behavior in contrast to recent theoretical predictions [H. Grille, C. Schnittler, and F. Bechstedt, Phys. Rev. B 61, 6091 (2000)]. Films grown on GaN reveal the influence of strain on the phonon mode frequencies due to pseudomorphic film growth. Al1-xInxN deposited directly on sapphire possesses phonon modes which indicate fully relaxed film growth.

Original languageEnglish (US)
Pages (from-to)1526-1528
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number11
DOIs
StatePublished - Mar 12 2001

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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