Strain evolution and phonons in AlN/GaN superlattices

V. Darakchieva, P. P. Paskov, M. Schubert, E. Valcheva, T. Paskova, H. Arwin, B. Monemar, H. Amano, I. Akasaki

Research output: Contribution to journalConference articlepeer-review

Abstract

AlN/GaN superlattices (SLs) with different periods grown on GaN buffer layers were studied by infrared spectroscopic ellipsometry (IRSE), Raman scattering (RS) and high-resolution reciprocal space mapping (RSM). The lattice parameters and the degree of strain in the GaN buffer and the SL constituents were determined. Phonon modes originating from the buffer layer and the SL sublayers were identified and their frequency shifts were correlated with the strain state of the films.

Original languageEnglish (US)
Pages (from-to)741-746
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume798
DOIs
StatePublished - 2003
EventGaN and Related Alloys - 2003 - Boston, MA, United States
Duration: Dec 1 2003Dec 5 2003

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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