Strain induced half-metal to semiconductor transition in GdN

Chun Gang Duan, R. F. Sabiryanov, Jianjun Liu, W. N. Mei, P. A. Dowben, J. R. Hardy

Research output: Contribution to journalArticlepeer-review

127 Scopus citations


We investigate the electronic structure and magnetic properties of GdN as a function of unit cell volume. Based on the first-principles calculations of GdN, we observe that there is a transformation in the conduction properties associated with the volume increase: first from half-metallic to semimetallic, then ultimately to semiconducting. We show that applying stress can alter the carrier concentration as well as mobility of the holes and electrons in the majority spin channel. In addition, we found that the exchange parameters depend strongly on lattice constant, thus the Curie temperature of this system can be enhanced by applying stress or doping impurities.

Original languageEnglish (US)
Article number237201
JournalPhysical Review Letters
Issue number23
StatePublished - Jun 17 2005

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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