Stress and phase purity analyses of diamond films deposited through laser-assisted combustion synthesis

T. Guillemet, Z. Q. Xie, Y. S. Zhou, J. B. Park, A. Veillere, W. Xiong, J. M. Heintz, J. F. Silvain, N. Chandra, Y. F. Lu

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

Diamond films were deposited on silicon and tungsten carbide substrates in open air through laser-assisted combustion synthesis. Laser-induced resonant excitation of ethylene molecules was achieved in the combustion process to promote diamond growth rate. In addition to microstructure study by scanning electron microscopy, Raman spectroscopy was used to analyze the phase purity and residual stress of the diamond films. High-purity diamond films were obtained through laser-assisted combustion synthesis. The levels of residual stress were in agreement with corresponding thermal expansion coefficients of diamond, silicon, and tungsten carbide. Diamond-film purity increases while residual stress decreases with an increasing film thickness. Diamond films deposited on silicon substrates exhibit higher purity and lower residual stress than those deposited on tungsten carbide substrates.

Original languageEnglish (US)
Pages (from-to)4120-4125
Number of pages6
JournalACS Applied Materials and Interfaces
Volume3
Issue number10
DOIs
StatePublished - Oct 26 2011

ASJC Scopus subject areas

  • Materials Science(all)

Fingerprint Dive into the research topics of 'Stress and phase purity analyses of diamond films deposited through laser-assisted combustion synthesis'. Together they form a unique fingerprint.

Cite this