Structural and Chemical Analysis of a Silicon Nitride Film on GaAs by Null Ellipsometry

S. A. Alterovitz; G. H. Bu‐Abbud; J. A. Woollam; D. C. Liu

doi:10.1002/pssa.2210850108

Structural and Chemical Analysis of a Silicon Nitride Film on GaAs by Null Ellipsometry

S. A. Alterovitz, G. H. Bu‐Abbud, J. A. Woollam, D. C. Liu

Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

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Abstract

Multiple‐wavelength‐angle‐of‐incidence null ellipsometry, together with the effective medium approximation, are used to evaluate both the composition and the geometrical structure of an insulating film made of silicon nitride and silicon oxide on a GaAs substrate. The results are found to be in good agreement with AES measurements on the same film.

Original language	English (US)
Pages (from-to)	69-76
Number of pages	8
Journal	physica status solidi (a)
Volume	85
Issue number	1
DOIs	https://doi.org/10.1002/pssa.2210850108
State	Published - Sep 16 1984

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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abstract = "Multiple‐wavelength‐angle‐of‐incidence null ellipsometry, together with the effective medium approximation, are used to evaluate both the composition and the geometrical structure of an insulating film made of silicon nitride and silicon oxide on a GaAs substrate. The results are found to be in good agreement with AES measurements on the same film.",

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AU - Liu, D. C.

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AB - Multiple‐wavelength‐angle‐of‐incidence null ellipsometry, together with the effective medium approximation, are used to evaluate both the composition and the geometrical structure of an insulating film made of silicon nitride and silicon oxide on a GaAs substrate. The results are found to be in good agreement with AES measurements on the same film.

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Structural and Chemical Analysis of a Silicon Nitride Film on GaAs by Null Ellipsometry

Abstract

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