Structural and Chemical Analysis of a Silicon Nitride Film on GaAs by Null Ellipsometry

S. A. Alterovitz, G. H. Bu‐Abbud, J. A. Woollam, D. C. Liu

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Multiple‐wavelength‐angle‐of‐incidence null ellipsometry, together with the effective medium approximation, are used to evaluate both the composition and the geometrical structure of an insulating film made of silicon nitride and silicon oxide on a GaAs substrate. The results are found to be in good agreement with AES measurements on the same film.

Original languageEnglish (US)
Pages (from-to)69-76
Number of pages8
Journalphysica status solidi (a)
Volume85
Issue number1
DOIs
StatePublished - Sep 16 1984

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Structural and Chemical Analysis of a Silicon Nitride Film on GaAs by Null Ellipsometry'. Together they form a unique fingerprint.

Cite this