Structural, magnetic, and electron-transport properties of epitaxial Mn2PtSn films

Y. Jin, S. Valloppilly, P. Kharel, J. Waybright, P. Lukashev, X. Z. Li, D. J. Sellmyer

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10 Scopus citations


The growth of new magnetic materials on suitable insulating substrates is an important part of the development of spin-electronics devices for memory or information processing. Epitaxial thin films of Mn2PtSn were grown on a MgO [001] substrate by magnetron co-sputtering of the constituents. Structural, magnetic, and electron-transport properties were investigated. The epitaxial Mn2PtSn film has an inverse tetragonal structure with the c-axis aligned in the plane of the MgO substrate. The lattice constants determined using XRD and TEM analysis are c = 6.124 Å and a = b = 4.505 Å. The orientation of Mn2PtSn c-axis which is 45° away from the a-axis of MgO has resulted in a small lattice mismatch of about 2.8%. The measured saturation magnetization is 5.3 μB/f.u., which is smaller than the first-principles calculated value of 6.4 μB/f.u. for ferromagnetic spin arrangement. Magnetization measurements determined the bulk magnetocrystalline anisotropy constant Kv of about 11.3 Merg/cm3 (1.13 MJ/m3). The electron-transport behavior is similar to that of normal magnetic metals. These results indicate that Mn2PtSn may have promising applications in spintronic devices.

Original languageEnglish (US)
Article number103903
JournalJournal of Applied Physics
Issue number10
StatePublished - Sep 14 2018

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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