Abstract
We have characterized the structure of the epitaxial Sc 2O 3 films grown on α-Al 2O 3 (111) substrate using molecular beam epitaxy (MBE) techniques. The Sc 2O 3 films grow in the bulk bixbyite phase with a very uniform thickness, and a high structural perfection. They grow with their cubic (111) axis parallel to the rhombohedral (111) axis of the sapphire substrate. The in-plane orientation of the films, however, is rotated by ±30 degrees with respect to the substrate rhombohedral axes. This is explained by the presence of two equivalent orientations of the 3-fold axis of the film on the quasi 6-fold surface of the substrate.
Original language | English (US) |
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Title of host publication | Materials Research Society Symposium Proceedings |
Editors | J. Morais, D. Kumar, M. Houssa, R.K. Singh, D. Landheer, R. Ramesh, R.M. Wallace, S. Guha, H. Koinuma |
Pages | 329-334 |
Number of pages | 6 |
Volume | 811 |
State | Published - 2004 |
Event | Integration of Advanced Micro- and Nanoelectronic Devices - Critical Issues and Solutions - San Francisco, CA, United States Duration: Apr 13 2004 → Apr 16 2004 |
Other
Other | Integration of Advanced Micro- and Nanoelectronic Devices - Critical Issues and Solutions |
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Country/Territory | United States |
City | San Francisco, CA |
Period | 4/13/04 → 4/16/04 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials