Abstract
The crystal structure of scandium oxide films epitaxially grown on α- Al2 O3 (0001) under an ultrahigh-vacuum is studied by single-crystal x-ray diffraction. The Sc2 O3 film grows in bixbyite phase on the basal (0001) surface of the sapphire substrate with its 〈111〉 axis aligned parallel to the substrate normal. In-plane orientation of the film, however, exhibits two distinct growth directions that are defined by the two possible surface orientations of the stepped α- Al2 O3 substrate. The atomic structure of the high-quality epitaxial film is fully relaxed and the film has unusual thickness uniformity.
Original language | English (US) |
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Article number | 021906 |
Pages (from-to) | 1-3 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 88 |
Issue number | 2 |
DOIs | |
State | Published - 2006 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)