Structure of Sc 2O 3 films epitaxially grown on α-Al 2O 3 (0001)

A. R. Kortan, N. Kopylov, J. Kwo, M. Hong, C. P. Chen, J. P. Mannaerts, S. H. Liou

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

The crystal structure of scandium oxide films epitaxially grown on α- Al2 O3 (0001) under an ultrahigh-vacuum is studied by single-crystal x-ray diffraction. The Sc2 O3 film grows in bixbyite phase on the basal (0001) surface of the sapphire substrate with its 〈111〉 axis aligned parallel to the substrate normal. In-plane orientation of the film, however, exhibits two distinct growth directions that are defined by the two possible surface orientations of the stepped α- Al2 O3 substrate. The atomic structure of the high-quality epitaxial film is fully relaxed and the film has unusual thickness uniformity.

Original languageEnglish (US)
Article number021906
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume88
Issue number2
DOIs
StatePublished - 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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