Studies of carbon nitride thin films synthesized by KrF excimer ablation of graphite in nitrogen atmosphere

Z. M. Ren, Y. F. Lu, W. D. Song, D. S.H. Chan, T. S. Low, K. Gamani, G. Chen, K. Li

Research output: Contribution to journalConference articlepeer-review

7 Scopus citations

Abstract

Carbon nitride thin films were deposited on silicon wafers by pulsed KrF excimer laser (wavelength 248 nm, duration 23 ns) ablation of graphite in nitrogen atmosphere. Different fluences of the excimer laser and pressures of the nitrogen atmosphere were used in order to achieve a high nitrogen content in the deposited thin films. Fourier Transform Infra-red (FTIR) and X-ray photoelectron spectroscopy (XPS) were used to identify the binding structure and the content of the nitrogen species in the deposited thin films. The highest N/C ratio 0.42 was achieved at an excimer laser fluence of 0.8 Jcm-2 with a repetition rate of 10 Hz under the nitrogen pressure of PN = 100 mTorr. A high content of C-N double bond instead of C-N triple bond was indicated in the deposited thin films. Ellipsometry was used to analyze the optical properties of the deposited thin films. The carbon nitride thin films have amorphous-semiconductor-like characteristics with the optical band gap Eopt, as high as 0.42 eV.

Original languageEnglish (US)
Pages (from-to)343-348
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume526
DOIs
StatePublished - 1998
Externally publishedYes
EventProceedings of the 1998 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 13 1998Apr 16 1998

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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