Study of indium tin oxide films exposed to atomic oxygen

Paul G. Snyder, Bhola N. De, John A. Woollam, T. J. Coutts, X. Li

Research output: Contribution to journalConference articlepeer-review

4 Scopus citations

Abstract

Indium tin oxide thin films (650 angstrom) were prepared by dc sputtering onto room temperature substrates. The films were exposed to an rf excited oxygen plasma, to qualitatively simulate the effects of atomic oxygen. Changes in optical, electrical, and structural properties were characterized as a function of exposure time.

Original languageEnglish (US)
Pages (from-to)133-135
Number of pages3
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume1118
DOIs
StatePublished - 1989
EventSpace Optical Materials and Space Qualification of Optics - Orlando, FL, USA
Duration: Mar 30 1989Mar 31 1989

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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