Sub-50 nm nanopatterning of metallic layers by green pulsed laser combined with atomic force microscopy

S. M. Huang, M. H. Hong, B. S. Luk'yanchuk, Y. F. Lu, W. D. Song, T. C. Chong

Research output: Contribution to journalConference articlepeer-review

17 Scopus citations

Abstract

Pulsed-laser assisted nanopatterning of metallic layers on silicon substrates was investigated under an atomic force microscope (AFM) tip. A 532 nm Nd:YAG laser with pulse duration of 7 ns and boron doped silicon tip was used. Nanopatterns like pit arrays and multilines were created with lateral dimensions between 10 and 15 nm and depths between 2.5 and 21 nm. The field enhancement factor under the tip, thermal expansion of the tip and the sample surface heating were investigated. It was proposed that the field enhancement mechanism was the dominating reason for the nanoprocessing.

Original languageEnglish (US)
Pages (from-to)1118-1125
Number of pages8
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume20
Issue number3
DOIs
StatePublished - May 2002
Externally publishedYes
Event20th North American Conference on Molecular Beam Epitaxy - Providence, RI, United States
Duration: Oct 1 2001Oct 3 2001

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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