Sub-50 nm nanopatterning of metallic layers by green pulsed laser combined with atomic force microscopy

S. M. Huang; M. H. Hong; B. S. Luk'yanchuk; Y. F. Lu; W. D. Song; T. C. Chong

doi:10.1116/1.1481865

Sub-50 nm nanopatterning of metallic layers by green pulsed laser combined with atomic force microscopy

S. M. Huang, M. H. Hong, B. S. Luk'yanchuk, Y. F. Lu, W. D. Song, T. C. Chong

Research output: Contribution to journal › Conference article › peer-review

4 Scopus citations

Abstract

Pulsed-laser assisted nanopatterning of metallic layers on silicon substrates was investigated under an atomic force microscope (AFM) tip. A 532 nm Nd:YAG laser with pulse duration of 7 ns and boron doped silicon tip was used. Nanopatterns like pit arrays and multilines were created with lateral dimensions between 10 and 15 nm and depths between 2.5 and 21 nm. The field enhancement factor under the tip, thermal expansion of the tip and the sample surface heating were investigated. It was proposed that the field enhancement mechanism was the dominating reason for the nanoprocessing.

Original language	English (US)
Pages (from-to)	1118-1125
Number of pages	8
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	20
Issue number	3
DOIs	https://doi.org/10.1116/1.1481865
State	Published - May 2002
Externally published	Yes
Event	20th North American Conference on Molecular Beam Epitaxy - Providence, RI, United States Duration: Oct 1 2001 → Oct 3 2001

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.1481865

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title = "Sub-50 nm nanopatterning of metallic layers by green pulsed laser combined with atomic force microscopy",

abstract = "Pulsed-laser assisted nanopatterning of metallic layers on silicon substrates was investigated under an atomic force microscope (AFM) tip. A 532 nm Nd:YAG laser with pulse duration of 7 ns and boron doped silicon tip was used. Nanopatterns like pit arrays and multilines were created with lateral dimensions between 10 and 15 nm and depths between 2.5 and 21 nm. The field enhancement factor under the tip, thermal expansion of the tip and the sample surface heating were investigated. It was proposed that the field enhancement mechanism was the dominating reason for the nanoprocessing.",

author = "Huang, {S. M.} and Hong, {M. H.} and Luk'yanchuk, {B. S.} and Lu, {Y. F.} and Song, {W. D.} and Chong, {T. C.}",

year = "2002",

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doi = "10.1116/1.1481865",

language = "English (US)",

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note = "20th North American Conference on Molecular Beam Epitaxy ; Conference date: 01-10-2001 Through 03-10-2001",

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T1 - Sub-50 nm nanopatterning of metallic layers by green pulsed laser combined with atomic force microscopy

AU - Huang, S. M.

AU - Hong, M. H.

AU - Luk'yanchuk, B. S.

AU - Lu, Y. F.

AU - Song, W. D.

AU - Chong, T. C.

PY - 2002/5

Y1 - 2002/5

N2 - Pulsed-laser assisted nanopatterning of metallic layers on silicon substrates was investigated under an atomic force microscope (AFM) tip. A 532 nm Nd:YAG laser with pulse duration of 7 ns and boron doped silicon tip was used. Nanopatterns like pit arrays and multilines were created with lateral dimensions between 10 and 15 nm and depths between 2.5 and 21 nm. The field enhancement factor under the tip, thermal expansion of the tip and the sample surface heating were investigated. It was proposed that the field enhancement mechanism was the dominating reason for the nanoprocessing.

AB - Pulsed-laser assisted nanopatterning of metallic layers on silicon substrates was investigated under an atomic force microscope (AFM) tip. A 532 nm Nd:YAG laser with pulse duration of 7 ns and boron doped silicon tip was used. Nanopatterns like pit arrays and multilines were created with lateral dimensions between 10 and 15 nm and depths between 2.5 and 21 nm. The field enhancement factor under the tip, thermal expansion of the tip and the sample surface heating were investigated. It was proposed that the field enhancement mechanism was the dominating reason for the nanoprocessing.

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JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

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ER -

Sub-50 nm nanopatterning of metallic layers by green pulsed laser combined with atomic force microscopy

Abstract

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