Suppression of Parasitic Bipolar Effects and Off-State Leakage in Fully-Depleted SOI n-MOSFET's Using Ge-lmplantation

Hua Fang Wei, James E. Chung, Nader M. Kalkhoran, Fereydoon Namavar

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

This work demonstrates a well-controlled technique of channel defect engineering, by implanting germanium into the channel of a Silicon-On-Insulator (SOI) MOSFET to generate subgap energy states. These subgap states act as minority-carrier lifetime killers to spoil the parasitic bipolar gain, and thus improve the source-to-drain breakdown voltage and reduce the front-channel gate-induced-drain-leakage (GIDL). The Ge-implant also serves the dual purpose of positioning most of the subgap states in the back interface region which reduce back-channel off-state leakage.

Original languageEnglish (US)
Pages (from-to)2096-2103
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume42
Issue number12
DOIs
StatePublished - Dec 1995
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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