J. J. Pouch, J. E. Oh, J. A. Woollam, K. D. Aylesworth, D. J. Sellmyer

Research output: Contribution to journalConference articlepeer-review


In the present investigation, amorphous thin (approximately 3000 Angstrom thick) Ta-Cu alloy films, with varying composition, were deposited on GaAs substrates by co-sputtering of high purity (99. 999%) Ta and Cu targets. A Au layer was subsequently deposited on each Ta-Cu sample. Annealing temperatures as high as 800 degree C were used. The AES data, combined with the elemental sensitivity factors, provided information on the nominal stoichiometry of the alloy film. Inter-diffusion involving the amorphous layer, the Au and GaAs were studied by AES. ESCA analysis provided additional information on the chemical bonding states of the constituent elements. The Ta//9//3Cu//7 film prevented the intermixing of Au, Ga and As for annealing up to 700 degree C. Out-diffusion of Ga and As through the Ta//9//3Cu// 7 layer was detected after an 800 degree C anneal.

Original languageEnglish (US)
Pages (from-to)400
Number of pages1
JournalJournal of molecular electronics
Issue number1
StatePublished - 1988
Externally publishedYes
EventProc of the 9th Symp on Appl Surf Anal - Dayton, OH, USA
Duration: Jun 3 1987Jun 5 1987

ASJC Scopus subject areas

  • Engineering(all)


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