Surface and dynamical properties of GeI2

Archit Dhingra, Alexey Lipatov, Haidong Lu, Katerina Chagoya, Joseph Dalton, Alexei Gruverman, Alexander Sinitskii, Richard G. Blair, Peter A. Dowben

Research output: Contribution to journalArticlepeer-review

Abstract

GeI2 is an interesting two-dimensional wide-band gap semiconductor because of diminished edge scattering due to an absence of dangling bonds. Angle-resolved x-ray photoemission spectroscopy indicates a germanium rich surface, and a surface to bulk core-level shift of 1.8 eV in binding energy, between the surface and bulk components of the Ge 2p3/2 core-level, making clear that the surface is different from the bulk. Temperature dependent studies indicate an effective Debye temperature ( ) of 186 18 K for the germanium x-ray photoemission spectroscopy feature associated with the surface. These measurements also suggest an unusually high effective Debye temperature for iodine (587 31 K), implying that iodine is present in the bulk of the material, and not the surface. From optical absorbance, GeI2 is seen to have an indirect (direct) optical band gap of 2.60 (2.8) 0.02 (0.1) eV, consistent with the expectations. Temperature dependent magnetometry indicates that GeI2 is moment paramagnetic at low temperatures (close to 4 K) and shows a diminishing saturation moment at high temperatures (close to 300 K and above).

Original languageEnglish (US)
Article number025001
Journal2D Materials
Volume9
Issue number2
DOIs
StatePublished - Apr 2022

Keywords

  • 2D materials
  • Debye temperature
  • GeI2
  • low-dimensional materials
  • surface termination
  • van der Waals semiconductor

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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