Surface regions of amorphous Si and crystalline Al in an Al-implanted Si crystal

J. Tafto; R. L. Sabatini; J. I. Budnick; F. Namavar

doi:10.1016/0167-577X(86)90081-9

Surface regions of amorphous Si and crystalline Al in an Al-implanted Si crystal

J. Tafto, R. L. Sabatini, J. I. Budnick, F. Namavar

Research output: Contribution to journal › Article › peer-review

Abstract

Implantation of 1 × 10¹⁸ ions/cm² of Al at 100 keV into a single crystal of silicon in a 10^-8 Torr vacuum system results in the formation of a 0.3 um surface region containing about 50% Al and 50% Si. Transmission electron microscopy studies show that the Al atoms form crystalline Al of grain size about 100 Å, and these grains are embedded in amorphous Si. In contrast to amorphous Si produced by other techniques, the amorphous Si produced by the ion implantation recrystallizes when illuminated with 120 keV electrons.

Original language	English (US)
Pages (from-to)	5-8
Number of pages	4
Journal	Materials Letters
Volume	5
Issue number	1-2
DOIs	https://doi.org/10.1016/0167-577X(86)90081-9
State	Published - Dec 1986
Externally published	Yes

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Surface regions of amorphous Si and crystalline Al in an Al-implanted Si crystal",

abstract = "Implantation of 1 × 1018 ions/cm2 of Al at 100 keV into a single crystal of silicon in a 10-8 Torr vacuum system results in the formation of a 0.3 um surface region containing about 50% Al and 50% Si. Transmission electron microscopy studies show that the Al atoms form crystalline Al of grain size about 100 {\AA}, and these grains are embedded in amorphous Si. In contrast to amorphous Si produced by other techniques, the amorphous Si produced by the ion implantation recrystallizes when illuminated with 120 keV electrons.",

author = "J. Tafto and Sabatini, {R. L.} and Budnick, {J. I.} and F. Namavar",

note = "Funding Information: * Work performed under the auspices of the US Department of Energy, Division of Energy, Division of Materials Science, Office of Basic Energy Sciences under Contract No. DE-AC02-76CH00016.",

year = "1986",

month = dec,

doi = "10.1016/0167-577X(86)90081-9",

language = "English (US)",

volume = "5",

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journal = "Materials Letters",

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TY - JOUR

T1 - Surface regions of amorphous Si and crystalline Al in an Al-implanted Si crystal

AU - Tafto, J.

AU - Sabatini, R. L.

AU - Budnick, J. I.

AU - Namavar, F.

N1 - Funding Information: * Work performed under the auspices of the US Department of Energy, Division of Energy, Division of Materials Science, Office of Basic Energy Sciences under Contract No. DE-AC02-76CH00016.

PY - 1986/12

Y1 - 1986/12

N2 - Implantation of 1 × 1018 ions/cm2 of Al at 100 keV into a single crystal of silicon in a 10-8 Torr vacuum system results in the formation of a 0.3 um surface region containing about 50% Al and 50% Si. Transmission electron microscopy studies show that the Al atoms form crystalline Al of grain size about 100 Å, and these grains are embedded in amorphous Si. In contrast to amorphous Si produced by other techniques, the amorphous Si produced by the ion implantation recrystallizes when illuminated with 120 keV electrons.

AB - Implantation of 1 × 1018 ions/cm2 of Al at 100 keV into a single crystal of silicon in a 10-8 Torr vacuum system results in the formation of a 0.3 um surface region containing about 50% Al and 50% Si. Transmission electron microscopy studies show that the Al atoms form crystalline Al of grain size about 100 Å, and these grains are embedded in amorphous Si. In contrast to amorphous Si produced by other techniques, the amorphous Si produced by the ion implantation recrystallizes when illuminated with 120 keV electrons.

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JO - Materials Letters

JF - Materials Letters

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Surface regions of amorphous Si and crystalline Al in an Al-implanted Si crystal

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