Surface states at the GaAs-germanium nitride interface

Y. Chung, D. W. Langer, H. P. Singh, J. A. Woollam

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Metal/insulator/semiconductor (MIS) structures were produced by reactive sputter deposition of germanium nitride onto n-GaAs. The electrical properties of the n-GaAs-germanium nitride interface were found to exhibit a strong dependence on the deposition process parameters and the annealing conditions. The interface density evaluated from conductance and capacitance measurements was of the order of 1011 eV-1 cm-2 at the midgap, and was improved by annealing in a hydrogen atmosphere before and after metallization. Because of a possible excess of germanium ions near the interface a counterclockwise hysteresis in the capacitance-voltage curve was observed. The dependence of germanium nitride film properties on heat treatment at different temperatures in hydrogen and nitrogen gas was studied by X-ray diffraction analysis and ellipsometric measurements. The low interface state density found using low r.f. sputtering power establishes sputtering as a competitive deposition technique.

Original languageEnglish (US)
Pages (from-to)193-199
Number of pages7
JournalThin Solid Films
Volume103
Issue number1-3
DOIs
StatePublished - 1983

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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