Abstract
Metal/insulator/semiconductor (MIS) structures were produced by reactive sputter deposition of germanium nitride onto n-GaAs. The electrical properties of the n-GaAs-germanium nitride interface were found to exhibit a strong dependence on the deposition process parameters and the annealing conditions. The interface density evaluated from conductance and capacitance measurements was of the order of 1011 eV-1 cm-2 at the midgap, and was improved by annealing in a hydrogen atmosphere before and after metallization. Because of a possible excess of germanium ions near the interface a counterclockwise hysteresis in the capacitance-voltage curve was observed. The dependence of germanium nitride film properties on heat treatment at different temperatures in hydrogen and nitrogen gas was studied by X-ray diffraction analysis and ellipsometric measurements. The low interface state density found using low r.f. sputtering power establishes sputtering as a competitive deposition technique.
Original language | English (US) |
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Pages (from-to) | 193-199 |
Number of pages | 7 |
Journal | Thin Solid Films |
Volume | 103 |
Issue number | 1-3 |
DOIs | |
State | Published - 1983 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry