Surface termination and Schottky-barrier formation of In4Se3(001)

Archit Dhingra; Pavlo V. Galiy; Lu Wang; Nataliia S. Vorobeva; Alexey Lipatov; Angel Torres; Taras M. Nenchuk; Simeon J. Gilbert; Alexander Sinitskii; Andrew J. Yost; Wai Ning Mei; Keisuke Fukutani; Jia Shiang Chen; Peter A. Dowben

doi:10.1088/1361-6641/ab7e45

Surface termination and Schottky-barrier formation of In₄Se₃(001)

Archit Dhingra, Pavlo V. Galiy, Lu Wang, Nataliia S. Vorobeva, Alexey Lipatov, Angel Torres, Taras M. Nenchuk, Simeon J. Gilbert, Alexander Sinitskii, Andrew J. Yost, Wai Ning Mei, Keisuke Fukutani, Jia Shiang Chen, Peter A. Dowben

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The surface termination of In₄Se₃(001) and the interface of this layered trichalcogenide, with Au, was examined using x-ray photoemission spectroscopy. Low energy electron diffraction indicates that the surface is highly crystalline, but suggests an absence of C_2v mirror plane symmetry. The surface termination of the In₄Se₃(001) is found, by angle-resolved x-ray photoemission spectroscopy, to be In, which is consistent with the observed Schottky barrier formation found with this n-type semiconductor. Transistor measurements confirm earlier results from photoemission, suggesting that In₄Se₃(001) is an n-type semiconductor, so that Schottky barrier formation with a large work function metal, such as Au, is expected. The measured low carrier mobilities could be the result of the contacts and would be consistent with Schottky barrier formation.

Original language	English (US)
Article number	065009
Journal	Semiconductor Science and Technology
Volume	35
Issue number	6
DOIs	https://doi.org/10.1088/1361-6641/ab7e45
State	Published - Jun 2020

Keywords

InSe
Schottky barrier
quasi-1D trichalcogenide
surface termination
surface-to-bulk core level shift

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1088/1361-6641/ab7e45

Cite this

Surface termination and Schottky-barrier formation of In₄Se₃(001). / Dhingra, Archit; Galiy, Pavlo V.; Wang, Lu; Vorobeva, Nataliia S.; Lipatov, Alexey; Torres, Angel; Nenchuk, Taras M.; Gilbert, Simeon J.; Sinitskii, Alexander; Yost, Andrew J.; Mei, Wai Ning; Fukutani, Keisuke; Chen, Jia Shiang; Dowben, Peter A.

In: Semiconductor Science and Technology, Vol. 35, No. 6, 065009, 06.2020.

Research output: Contribution to journal › Article › peer-review

Dhingra, Archit ; Galiy, Pavlo V. ; Wang, Lu ; Vorobeva, Nataliia S. ; Lipatov, Alexey ; Torres, Angel ; Nenchuk, Taras M. ; Gilbert, Simeon J. ; Sinitskii, Alexander ; Yost, Andrew J. ; Mei, Wai Ning ; Fukutani, Keisuke ; Chen, Jia Shiang ; Dowben, Peter A. / Surface termination and Schottky-barrier formation of In₄Se₃(001). In: Semiconductor Science and Technology. 2020 ; Vol. 35, No. 6.

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abstract = "The surface termination of In4Se3(001) and the interface of this layered trichalcogenide, with Au, was examined using x-ray photoemission spectroscopy. Low energy electron diffraction indicates that the surface is highly crystalline, but suggests an absence of C2v mirror plane symmetry. The surface termination of the In4Se3(001) is found, by angle-resolved x-ray photoemission spectroscopy, to be In, which is consistent with the observed Schottky barrier formation found with this n-type semiconductor. Transistor measurements confirm earlier results from photoemission, suggesting that In4Se3(001) is an n-type semiconductor, so that Schottky barrier formation with a large work function metal, such as Au, is expected. The measured low carrier mobilities could be the result of the contacts and would be consistent with Schottky barrier formation.",

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AU - Torres, Angel

AU - Nenchuk, Taras M.

AU - Gilbert, Simeon J.

AU - Sinitskii, Alexander

AU - Yost, Andrew J.

AU - Mei, Wai Ning

AU - Fukutani, Keisuke

AU - Chen, Jia Shiang

AU - Dowben, Peter A.

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N2 - The surface termination of In4Se3(001) and the interface of this layered trichalcogenide, with Au, was examined using x-ray photoemission spectroscopy. Low energy electron diffraction indicates that the surface is highly crystalline, but suggests an absence of C2v mirror plane symmetry. The surface termination of the In4Se3(001) is found, by angle-resolved x-ray photoemission spectroscopy, to be In, which is consistent with the observed Schottky barrier formation found with this n-type semiconductor. Transistor measurements confirm earlier results from photoemission, suggesting that In4Se3(001) is an n-type semiconductor, so that Schottky barrier formation with a large work function metal, such as Au, is expected. The measured low carrier mobilities could be the result of the contacts and would be consistent with Schottky barrier formation.

AB - The surface termination of In4Se3(001) and the interface of this layered trichalcogenide, with Au, was examined using x-ray photoemission spectroscopy. Low energy electron diffraction indicates that the surface is highly crystalline, but suggests an absence of C2v mirror plane symmetry. The surface termination of the In4Se3(001) is found, by angle-resolved x-ray photoemission spectroscopy, to be In, which is consistent with the observed Schottky barrier formation found with this n-type semiconductor. Transistor measurements confirm earlier results from photoemission, suggesting that In4Se3(001) is an n-type semiconductor, so that Schottky barrier formation with a large work function metal, such as Au, is expected. The measured low carrier mobilities could be the result of the contacts and would be consistent with Schottky barrier formation.

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