Surface termination and Schottky-barrier formation of In4Se3(001)

Archit Dhingra, Pavlo V. Galiy, Lu Wang, Nataliia S. Vorobeva, Alexey Lipatov, Angel Torres, Taras M. Nenchuk, Simeon J. Gilbert, Alexander Sinitskii, Andrew J. Yost, Wai Ning Mei, Keisuke Fukutani, Jia Shiang Chen, Peter A. Dowben

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


The surface termination of In4Se3(001) and the interface of this layered trichalcogenide, with Au, was examined using x-ray photoemission spectroscopy. Low energy electron diffraction indicates that the surface is highly crystalline, but suggests an absence of C2v mirror plane symmetry. The surface termination of the In4Se3(001) is found, by angle-resolved x-ray photoemission spectroscopy, to be In, which is consistent with the observed Schottky barrier formation found with this n-type semiconductor. Transistor measurements confirm earlier results from photoemission, suggesting that In4Se3(001) is an n-type semiconductor, so that Schottky barrier formation with a large work function metal, such as Au, is expected. The measured low carrier mobilities could be the result of the contacts and would be consistent with Schottky barrier formation.

Original languageEnglish (US)
Article number065009
JournalSemiconductor Science and Technology
Issue number6
StatePublished - Jun 2020


  • InSe
  • Schottky barrier
  • quasi-1D trichalcogenide
  • surface termination
  • surface-to-bulk core level shift

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


Dive into the research topics of 'Surface termination and Schottky-barrier formation of In4Se3(001)'. Together they form a unique fingerprint.

Cite this