Abstract
Pt-Bi films were synthesized on glass and thermally oxidized silicon substrates by e-beam evaporation and annealing. The structures were characterized using X-ray diffraction (XRD) and transmission electron microscopy/selected area electron diffraction (TEM/SAED) techniques. Single-phase PtBi was obtained at an annealing temperature of 300°C, whereas a higher annealing temperature of 400°C was required to obtain the highly textured γ-PtBi2 phase. TEM/SAED analysis showed that the films annealed at 400°C contain a dominant γ-PtBi2 phase with a small amount of γ-PtBi2 and γ-PtBi2 phases. Both the PtBi and γ-PtBi2 phases are highly textured in these two kinds of film: the c-axis of the hexagonal PtBi phase is mostly in the film plane, whereas the c-axis of the trigonal-PtBi2 phase is perpendicular to the film plane. The electrical resistivity of the film with the-PtBi2 phase was smaller by one order of magnitude than that of the film with the PtBi phase.
Original language | English (US) |
---|---|
Pages (from-to) | 3406-3415 |
Number of pages | 10 |
Journal | Philosophical Magazine |
Volume | 91 |
Issue number | 25 |
DOIs | |
State | Published - Sep 1 2011 |
Keywords
- Pt-Bi
- TEM
- XRD
- electron diffraction
- microstructure
- resistivity
- simulation
- texture
- thin film
ASJC Scopus subject areas
- Condensed Matter Physics