Synthesis of gallium nitride nanoplates using laser-assisted metal organic chemical vapor deposition

P. Thirugnanam; Y. S. Zhou; H. R. Golgir; Y. Gao; Y. F. Lu

doi:10.2351/1.5062985

Synthesis of gallium nitride nanoplates using laser-assisted metal organic chemical vapor deposition

P. Thirugnanam, Y. S. Zhou, H. R. Golgir, Y. Gao, Y. F. Lu

Electrical & Computer Engineering

Research output: Contribution to conference › Paper › peer-review

2 Scopus citations

Abstract

The m-plane oriented gallium nitride (GaN) nanoplates were successfully grown on silicon (Si) substrates using laser-assisted metal organic chemical vapor deposition (L-MOCVD). The morphology and>1010< orientation of the nanoplates were confirmed using scanning electron microscope and transmission electron microscope. The strong A1 (TO) mode of Raman spectra and (1010) peak of X-ray diffraction pattern confirmed the m-plane orientation of the GaN nanoplates. The repeated growth on the c- and m-plane of nanoplates resulted in the formation of interlinked GaN nanoplate networks. Our results suggest that L-MOCVD is a promising technique for the rapid growth of m-plane oriented GaN nanoplates on the Si substrates at low growth temperatures.

Original language	English (US)
Pages	888-892
Number of pages	5
DOIs	https://doi.org/10.2351/1.5062985
State	Published - 2013
Event	32nd International Congress on Applications of Lasers and Electro-Optics, ICALEO 2013 - Miami, FL, United States Duration: Oct 6 2013 → Oct 10 2013

Conference

Conference	32nd International Congress on Applications of Lasers and Electro-Optics, ICALEO 2013
Country/Territory	United States
City	Miami, FL
Period	10/6/13 → 10/10/13

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

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10.2351/1.5062985

Cite this

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title = "Synthesis of gallium nitride nanoplates using laser-assisted metal organic chemical vapor deposition",

abstract = "The m-plane oriented gallium nitride (GaN) nanoplates were successfully grown on silicon (Si) substrates using laser-assisted metal organic chemical vapor deposition (L-MOCVD). The morphology and>1010< orientation of the nanoplates were confirmed using scanning electron microscope and transmission electron microscope. The strong A1 (TO) mode of Raman spectra and (1010) peak of X-ray diffraction pattern confirmed the m-plane orientation of the GaN nanoplates. The repeated growth on the c- and m-plane of nanoplates resulted in the formation of interlinked GaN nanoplate networks. Our results suggest that L-MOCVD is a promising technique for the rapid growth of m-plane oriented GaN nanoplates on the Si substrates at low growth temperatures.",

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year = "2013",

doi = "10.2351/1.5062985",

language = "English (US)",

pages = "888--892",

note = "32nd International Congress on Applications of Lasers and Electro-Optics, ICALEO 2013 ; Conference date: 06-10-2013 Through 10-10-2013",

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T1 - Synthesis of gallium nitride nanoplates using laser-assisted metal organic chemical vapor deposition

AU - Thirugnanam, P.

AU - Zhou, Y. S.

AU - Golgir, H. R.

AU - Gao, Y.

AU - Lu, Y. F.

PY - 2013

Y1 - 2013

N2 - The m-plane oriented gallium nitride (GaN) nanoplates were successfully grown on silicon (Si) substrates using laser-assisted metal organic chemical vapor deposition (L-MOCVD). The morphology and>1010< orientation of the nanoplates were confirmed using scanning electron microscope and transmission electron microscope. The strong A1 (TO) mode of Raman spectra and (1010) peak of X-ray diffraction pattern confirmed the m-plane orientation of the GaN nanoplates. The repeated growth on the c- and m-plane of nanoplates resulted in the formation of interlinked GaN nanoplate networks. Our results suggest that L-MOCVD is a promising technique for the rapid growth of m-plane oriented GaN nanoplates on the Si substrates at low growth temperatures.

AB - The m-plane oriented gallium nitride (GaN) nanoplates were successfully grown on silicon (Si) substrates using laser-assisted metal organic chemical vapor deposition (L-MOCVD). The morphology and>1010< orientation of the nanoplates were confirmed using scanning electron microscope and transmission electron microscope. The strong A1 (TO) mode of Raman spectra and (1010) peak of X-ray diffraction pattern confirmed the m-plane orientation of the GaN nanoplates. The repeated growth on the c- and m-plane of nanoplates resulted in the formation of interlinked GaN nanoplate networks. Our results suggest that L-MOCVD is a promising technique for the rapid growth of m-plane oriented GaN nanoplates on the Si substrates at low growth temperatures.

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Synthesis of gallium nitride nanoplates using laser-assisted metal organic chemical vapor deposition

Abstract

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