SYSTEMATICS OF SILICIDE FORMATION BY HIGH DOSE IMPLANTATION OF TRANSITION METALS INTO Si.

F. Namavar, F. H. Sanchez, J. I. Budnick, A. H. Fasihuddin, H. C. Hayden

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Scopus citations

Abstract

Authors have studied the formation of transition-metal thin films by high dose (up to 10**1**8 ions/cm**2) implantation of Ti, V, Cr, Mn, Fe, Co, Ni and Nb at room temperature and 350 degree C into Si less than 100 greater than . For implantation at 350 degree C, our results, as obtained by Rutherford backscattering, X-ray diffractometry and Read Camera measurements, indicate that one can categorize these metals into two groups: 1. a chromium group which includes V, Cr, Nb, Ti and Mn. Metals V, Cr and Nb form compounds (VSi//2, CrSi//2, NbSi//2) with a hexagonal structure of the CrSi//2 type whereas Ti and Mn both form compounds (Ti//5Si//3, Mn//5Si//3) with a hexagonal structure of the Mn//5Si//3 type. 2. an iron group which includes Fe, Co and Ni. These metals form compounds (FeSi, CoSi, NiSi) with a cubic structure of the FeSi type. In this paper the experimental results for Cr and Fe implantation at room temperature and 350 degree C will be discussed.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposia Proceedings
EditorsMichael O. Thompson, S.Thomas Picraux, James S. Williams
PublisherMaterials Research Soc
Pages487-492
Number of pages6
ISBN (Print)0931837405
StatePublished - 1987
EventBeam-Solid Interact and Transient Processes - Boston, MA, USA
Duration: Dec 1 1986Dec 4 1986

Publication series

NameMaterials Research Society Symposia Proceedings
Volume74
ISSN (Print)0272-9172

Other

OtherBeam-Solid Interact and Transient Processes
CityBoston, MA, USA
Period12/1/8612/4/86

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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