Authors have studied the formation of transition-metal thin films by high dose (up to 10**1**8 ions/cm**2) implantation of Ti, V, Cr, Mn, Fe, Co, Ni and Nb at room temperature and 350 degree C into Si less than 100 greater than . For implantation at 350 degree C, our results, as obtained by Rutherford backscattering, X-ray diffractometry and Read Camera measurements, indicate that one can categorize these metals into two groups: 1. a chromium group which includes V, Cr, Nb, Ti and Mn. Metals V, Cr and Nb form compounds (VSi//2, CrSi//2, NbSi//2) with a hexagonal structure of the CrSi//2 type whereas Ti and Mn both form compounds (Ti//5Si//3, Mn//5Si//3) with a hexagonal structure of the Mn//5Si//3 type. 2. an iron group which includes Fe, Co and Ni. These metals form compounds (FeSi, CoSi, NiSi) with a cubic structure of the FeSi type. In this paper the experimental results for Cr and Fe implantation at room temperature and 350 degree C will be discussed.