Tailoring magnetic anisotropy at the ferromagnetic/ferroelectric interface

Chun Gang Duan, Julian P. Velev, R. F. Sabirianov, W. N. Mei, S. S. Jaswal, E. Y. Tsymbal

Research output: Contribution to journalArticlepeer-review

132 Scopus citations

Abstract

It is predicted that magnetic anisotropy of a thin magnetic film may be affected by the polarization of a ferroelectric material. Using a FeBaTi O3 bilayer as a representative model and performing first-principles calculations, we demonstrate that a reversal of the electric polarization of BaTi O3 produces a sizable change in magnetic anisotropy energy of Fe films. Tailoring the magnetic anisotropy of a nanomagnet by an adjacent ferroelectric material may yield entirely new device concepts, such as electric-field controlled magnetic data storage.

Original languageEnglish (US)
Article number122905
JournalApplied Physics Letters
Volume92
Issue number12
DOIs
StatePublished - 2008

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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