Tailoring magnetic anisotropy at the ferromagnetic/ferroelectric interface

Chun Gang Duan; Julian P. Velev; R. F. Sabirianov; W. N. Mei; S. S. Jaswal; E. Y. Tsymbal

doi:10.1063/1.2901879

Tailoring magnetic anisotropy at the ferromagnetic/ferroelectric interface

Chun Gang Duan, Julian P. Velev, R. F. Sabirianov, W. N. Mei, S. S. Jaswal, E. Y. Tsymbal

Physics

Research output: Contribution to journal › Article › peer-review

144 Scopus citations

Abstract

It is predicted that magnetic anisotropy of a thin magnetic film may be affected by the polarization of a ferroelectric material. Using a FeBaTi O3 bilayer as a representative model and performing first-principles calculations, we demonstrate that a reversal of the electric polarization of BaTi O3 produces a sizable change in magnetic anisotropy energy of Fe films. Tailoring the magnetic anisotropy of a nanomagnet by an adjacent ferroelectric material may yield entirely new device concepts, such as electric-field controlled magnetic data storage.

Original language	English (US)
Article number	122905
Journal	Applied Physics Letters
Volume	92
Issue number	12
DOIs	https://doi.org/10.1063/1.2901879
State	Published - 2008

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2901879

Cite this

@article{9e7fffa6a1714b9286aed2b654a503e1,

title = "Tailoring magnetic anisotropy at the ferromagnetic/ferroelectric interface",

abstract = "It is predicted that magnetic anisotropy of a thin magnetic film may be affected by the polarization of a ferroelectric material. Using a FeBaTi O3 bilayer as a representative model and performing first-principles calculations, we demonstrate that a reversal of the electric polarization of BaTi O3 produces a sizable change in magnetic anisotropy energy of Fe films. Tailoring the magnetic anisotropy of a nanomagnet by an adjacent ferroelectric material may yield entirely new device concepts, such as electric-field controlled magnetic data storage.",

author = "Duan, {Chun Gang} and Velev, {Julian P.} and Sabirianov, {R. F.} and Mei, {W. N.} and Jaswal, {S. S.} and Tsymbal, {E. Y.}",

note = "Funding Information: We thank Ruqian Wu for fruitful discussions. This work was supported by the NSF and the Nanoelectronics Research Initiative through the Materials Research Science and Engineering Center at the University of Nebraska, the Nebraska Research Initiative, the Office of Naval Research, and the NSFC (Grant No. 50771072). Computations were performed at the Center for Nanophase Materials Sciences, Oak Ridge National Laboratory.",

year = "2008",

doi = "10.1063/1.2901879",

language = "English (US)",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "12",

}

TY - JOUR

T1 - Tailoring magnetic anisotropy at the ferromagnetic/ferroelectric interface

AU - Duan, Chun Gang

AU - Velev, Julian P.

AU - Sabirianov, R. F.

AU - Mei, W. N.

AU - Jaswal, S. S.

AU - Tsymbal, E. Y.

N1 - Funding Information: We thank Ruqian Wu for fruitful discussions. This work was supported by the NSF and the Nanoelectronics Research Initiative through the Materials Research Science and Engineering Center at the University of Nebraska, the Nebraska Research Initiative, the Office of Naval Research, and the NSFC (Grant No. 50771072). Computations were performed at the Center for Nanophase Materials Sciences, Oak Ridge National Laboratory.

PY - 2008

Y1 - 2008

N2 - It is predicted that magnetic anisotropy of a thin magnetic film may be affected by the polarization of a ferroelectric material. Using a FeBaTi O3 bilayer as a representative model and performing first-principles calculations, we demonstrate that a reversal of the electric polarization of BaTi O3 produces a sizable change in magnetic anisotropy energy of Fe films. Tailoring the magnetic anisotropy of a nanomagnet by an adjacent ferroelectric material may yield entirely new device concepts, such as electric-field controlled magnetic data storage.

AB - It is predicted that magnetic anisotropy of a thin magnetic film may be affected by the polarization of a ferroelectric material. Using a FeBaTi O3 bilayer as a representative model and performing first-principles calculations, we demonstrate that a reversal of the electric polarization of BaTi O3 produces a sizable change in magnetic anisotropy energy of Fe films. Tailoring the magnetic anisotropy of a nanomagnet by an adjacent ferroelectric material may yield entirely new device concepts, such as electric-field controlled magnetic data storage.

UR - http://www.scopus.com/inward/record.url?scp=41349115279&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=41349115279&partnerID=8YFLogxK

U2 - 10.1063/1.2901879

DO - 10.1063/1.2901879

M3 - Article

AN - SCOPUS:41349115279

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

M1 - 122905

ER -

Tailoring magnetic anisotropy at the ferromagnetic/ferroelectric interface

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this