TY - JOUR
T1 - TEM study of crystalline structures of Cr-N thin films
AU - Li, X. Z.
AU - Zhang, J.
AU - Sellmyer, D. J.
PY - 2004/12
Y1 - 2004/12
N2 - Cr-N films were grown on Si (001) substrates by reactive magnetron sputtering under an N2/Ar atmosphere at room temperature. The composition of the films, expressed as Cr1-xNx, can be varied by changing the N2/Ar pressure ratio during the synthesis process. Crystalline states of Cr-N films have been studied using electron diffraction. It is well known that two intermediate phases, Cr2N (hexagonal) and CrN (cubic), exist in the Cr-N system, and small variations around the ideal stoichiometry are tolerated. The present study shows that cubic CrN with vacancies rather than hexagonal Cr2N may exist in a Cr-N film with a thickness of about 50 nm produced under a low N2 partial pressure.
AB - Cr-N films were grown on Si (001) substrates by reactive magnetron sputtering under an N2/Ar atmosphere at room temperature. The composition of the films, expressed as Cr1-xNx, can be varied by changing the N2/Ar pressure ratio during the synthesis process. Crystalline states of Cr-N films have been studied using electron diffraction. It is well known that two intermediate phases, Cr2N (hexagonal) and CrN (cubic), exist in the Cr-N system, and small variations around the ideal stoichiometry are tolerated. The present study shows that cubic CrN with vacancies rather than hexagonal Cr2N may exist in a Cr-N film with a thickness of about 50 nm produced under a low N2 partial pressure.
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U2 - 10.1107/S0021889804022642
DO - 10.1107/S0021889804022642
M3 - Article
AN - SCOPUS:10344263361
SN - 0021-8898
VL - 37
SP - 1010
EP - 1012
JO - Journal of Applied Crystallography
JF - Journal of Applied Crystallography
IS - 6
ER -