TEM study of interfaces and defects in MOCVD-grown GaN on SiC on SIMOX

W. L. Zhou, P. Pirouz, F. Namavar, P. C. Colter, M. Yoganathan, M. W. Leksono, J. I. Pankove

Research output: Contribution to journalConference articlepeer-review

Abstract

SiC was grown on the top Si layer of SIMOX by carbonization followed by chemical vapor deposition (CVD). Subsequently, GaN was deposited on the SiC by metallorganic (MO)CVD to produce a GaN/SiC/Si/SiO2/Si multilayer structure. This multilayer film was investigated by conventional transmission electron microscopy (TEM) and high resolution (HR)TEM using cross-sectional thin foils. The GaN layer was found to consist of predominately hexagonal gallium nitride (h-GaN), and a smaller fraction of cubic GaN (c-GaN) crystallites. The orientation relationship between most of the h-GaN grains and cubic SiC (3C-SiC) was found to be (0001)GaN∥(111)SiC; [112̄0]GaN∥[11̄0]SiC, while most of the c-GaN grains had an orientation relationship (001)GaN∥(001)SiC; [11̄0]GaN∥[11̄0]SiC with respect to the 3C-SiC substrate. The hexagonal grains of GaN were found to grow as two variants. In this paper, the defects in both h-GaN and c-GaN are characterized and discussed.

Original languageEnglish (US)
Pages (from-to)471-476
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume482
DOIs
StatePublished - 1997
EventProceedings of the 1997 MRS Fall Meeting - Boston, MA, USA
Duration: Dec 1 1997Dec 4 1997

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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