TEM study of interfaces and defects in MOCVD-grown GaN on SiC on SIMOX

W. L. Zhou; P. Pirouz; F. Namavar; P. C. Colter; M. Yoganathan; M. W. Leksono; J. I. Pankove

doi:10.1557/proc-482-471

TEM study of interfaces and defects in MOCVD-grown GaN on SiC on SIMOX

W. L. Zhou, P. Pirouz, F. Namavar, P. C. Colter, M. Yoganathan, M. W. Leksono, J. I. Pankove

Research output: Contribution to journal › Conference article › peer-review

Abstract

SiC was grown on the top Si layer of SIMOX by carbonization followed by chemical vapor deposition (CVD). Subsequently, GaN was deposited on the SiC by metallorganic (MO)CVD to produce a GaN/SiC/Si/SiO₂/Si multilayer structure. This multilayer film was investigated by conventional transmission electron microscopy (TEM) and high resolution (HR)TEM using cross-sectional thin foils. The GaN layer was found to consist of predominately hexagonal gallium nitride (h-GaN), and a smaller fraction of cubic GaN (c-GaN) crystallites. The orientation relationship between most of the h-GaN grains and cubic SiC (3C-SiC) was found to be (0001)_GaN∥(111)_SiC; [112̄0]_GaN∥[11̄0]_SiC, while most of the c-GaN grains had an orientation relationship (001)_GaN∥(001)_SiC; [11̄0]_GaN∥[11̄0]_SiC with respect to the 3C-SiC substrate. The hexagonal grains of GaN were found to grow as two variants. In this paper, the defects in both h-GaN and c-GaN are characterized and discussed.

Original language	English (US)
Pages (from-to)	471-476
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	482
DOIs	https://doi.org/10.1557/proc-482-471
State	Published - 1997
Externally published	Yes
Event	Proceedings of the 1997 MRS Fall Meeting - Boston, MA, USA Duration: Dec 1 1997 → Dec 4 1997

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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@article{c7f629e1856d49ce94eadd11e16bd41d,

title = "TEM study of interfaces and defects in MOCVD-grown GaN on SiC on SIMOX",

abstract = "SiC was grown on the top Si layer of SIMOX by carbonization followed by chemical vapor deposition (CVD). Subsequently, GaN was deposited on the SiC by metallorganic (MO)CVD to produce a GaN/SiC/Si/SiO2/Si multilayer structure. This multilayer film was investigated by conventional transmission electron microscopy (TEM) and high resolution (HR)TEM using cross-sectional thin foils. The GaN layer was found to consist of predominately hexagonal gallium nitride (h-GaN), and a smaller fraction of cubic GaN (c-GaN) crystallites. The orientation relationship between most of the h-GaN grains and cubic SiC (3C-SiC) was found to be (0001)GaN∥(111)SiC; [11{\=2}0]GaN∥[1{\=1}0]SiC, while most of the c-GaN grains had an orientation relationship (001)GaN∥(001)SiC; [1{\=1}0]GaN∥[1{\=1}0]SiC with respect to the 3C-SiC substrate. The hexagonal grains of GaN were found to grow as two variants. In this paper, the defects in both h-GaN and c-GaN are characterized and discussed.",

author = "Zhou, {W. L.} and P. Pirouz and F. Namavar and Colter, {P. C.} and M. Yoganathan and Leksono, {M. W.} and Pankove, {J. I.}",

year = "1997",

doi = "10.1557/proc-482-471",

language = "English (US)",

volume = "482",

pages = "471--476",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1997 MRS Fall Meeting ; Conference date: 01-12-1997 Through 04-12-1997",

}

TY - JOUR

T1 - TEM study of interfaces and defects in MOCVD-grown GaN on SiC on SIMOX

AU - Zhou, W. L.

AU - Pirouz, P.

AU - Namavar, F.

AU - Colter, P. C.

AU - Yoganathan, M.

AU - Leksono, M. W.

AU - Pankove, J. I.

PY - 1997

Y1 - 1997

N2 - SiC was grown on the top Si layer of SIMOX by carbonization followed by chemical vapor deposition (CVD). Subsequently, GaN was deposited on the SiC by metallorganic (MO)CVD to produce a GaN/SiC/Si/SiO2/Si multilayer structure. This multilayer film was investigated by conventional transmission electron microscopy (TEM) and high resolution (HR)TEM using cross-sectional thin foils. The GaN layer was found to consist of predominately hexagonal gallium nitride (h-GaN), and a smaller fraction of cubic GaN (c-GaN) crystallites. The orientation relationship between most of the h-GaN grains and cubic SiC (3C-SiC) was found to be (0001)GaN∥(111)SiC; [112̄0]GaN∥[11̄0]SiC, while most of the c-GaN grains had an orientation relationship (001)GaN∥(001)SiC; [11̄0]GaN∥[11̄0]SiC with respect to the 3C-SiC substrate. The hexagonal grains of GaN were found to grow as two variants. In this paper, the defects in both h-GaN and c-GaN are characterized and discussed.

AB - SiC was grown on the top Si layer of SIMOX by carbonization followed by chemical vapor deposition (CVD). Subsequently, GaN was deposited on the SiC by metallorganic (MO)CVD to produce a GaN/SiC/Si/SiO2/Si multilayer structure. This multilayer film was investigated by conventional transmission electron microscopy (TEM) and high resolution (HR)TEM using cross-sectional thin foils. The GaN layer was found to consist of predominately hexagonal gallium nitride (h-GaN), and a smaller fraction of cubic GaN (c-GaN) crystallites. The orientation relationship between most of the h-GaN grains and cubic SiC (3C-SiC) was found to be (0001)GaN∥(111)SiC; [112̄0]GaN∥[11̄0]SiC, while most of the c-GaN grains had an orientation relationship (001)GaN∥(001)SiC; [11̄0]GaN∥[11̄0]SiC with respect to the 3C-SiC substrate. The hexagonal grains of GaN were found to grow as two variants. In this paper, the defects in both h-GaN and c-GaN are characterized and discussed.

UR - http://www.scopus.com/inward/record.url?scp=0031389265&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031389265&partnerID=8YFLogxK

U2 - 10.1557/proc-482-471

DO - 10.1557/proc-482-471

M3 - Conference article

AN - SCOPUS:0031389265

SN - 0272-9172

VL - 482

SP - 471

EP - 476

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1997 MRS Fall Meeting

Y2 - 1 December 1997 through 4 December 1997

ER -

TEM study of interfaces and defects in MOCVD-grown GaN on SiC on SIMOX

Abstract

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