Temperature-dependence of the refractive index and the optical transitions at the fundamental band-gap of ZnO

R. Schmidt-Grund; N. Ashkenov; M. M. Schubert; W. Czakai; D. Faltermeier; G. Benndorf; H. Hochmuth; M. Lorenz; M. Grundmann

doi:10.1063/1.2729872

Temperature-dependence of the refractive index and the optical transitions at the fundamental band-gap of ZnO

R. Schmidt-Grund, N. Ashkenov, M. M. Schubert, W. Czakai, D. Faltermeier, G. Benndorf, H. Hochmuth, M. Lorenz, M. Grundmann

Electrical & Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

24 Scopus citations

Abstract

We report the temperature dependencies of the fundamental band-to-band transition energies, free exciton broadening, and the below-band-gap refractive index in ZnO. Spectroscopic ellipsometry data, taken from an (0001)-oriented ZnO thin film at temperatures between 5 K and 829 K, and for photon energies from 0.75 eV to 4.5 eV, are analysed by using model dielectric functions, augmented by excitonic continuum and free exciton contributions. A strong red-shift of the three wurtzite-type Γ-point transition energies is observed.

Original language	English (US)
Title of host publication	Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
Pages	271-272
Number of pages	2
DOIs	https://doi.org/10.1063/1.2729872
State	Published - 2007
Event	28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria Duration: Jul 24 2006 → Jul 28 2006

Publication series

Name	AIP Conference Proceedings
Volume	893
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Other

Other	28th International Conference on the Physics of Semiconductors, ICPS 2006
Country/Territory	Austria
City	Vienna
Period	7/24/06 → 7/28/06

Keywords

Band-to-band transition
Dielectric function
Electron-phonon interaction
Ellipsometry
Temperature dependence
ZnO

ASJC Scopus subject areas

General Physics and Astronomy

Access to Document

10.1063/1.2729872

Cite this

Schmidt-Grund, R., Ashkenov, N., Schubert, M. M., Czakai, W., Faltermeier, D., Benndorf, G., Hochmuth, H., Lorenz, M., & Grundmann, M. (2007). Temperature-dependence of the refractive index and the optical transitions at the fundamental band-gap of ZnO. In Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B (pp. 271-272). (AIP Conference Proceedings; Vol. 893). https://doi.org/10.1063/1.2729872

Temperature-dependence of the refractive index and the optical transitions at the fundamental band-gap of ZnO. / Schmidt-Grund, R.; Ashkenov, N.; Schubert, M. M. et al.
Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B. 2007. p. 271-272 (AIP Conference Proceedings; Vol. 893).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Schmidt-Grund, R, Ashkenov, N, Schubert, MM, Czakai, W, Faltermeier, D, Benndorf, G, Hochmuth, H, Lorenz, M & Grundmann, M 2007, Temperature-dependence of the refractive index and the optical transitions at the fundamental band-gap of ZnO. in Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B. AIP Conference Proceedings, vol. 893, pp. 271-272, 28th International Conference on the Physics of Semiconductors, ICPS 2006, Vienna, Austria, 7/24/06. https://doi.org/10.1063/1.2729872

Schmidt-Grund R, Ashkenov N, Schubert MM, Czakai W, Faltermeier D, Benndorf G et al. Temperature-dependence of the refractive index and the optical transitions at the fundamental band-gap of ZnO. In Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B. 2007. p. 271-272. (AIP Conference Proceedings). doi: 10.1063/1.2729872

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abstract = "We report the temperature dependencies of the fundamental band-to-band transition energies, free exciton broadening, and the below-band-gap refractive index in ZnO. Spectroscopic ellipsometry data, taken from an (0001)-oriented ZnO thin film at temperatures between 5 K and 829 K, and for photon energies from 0.75 eV to 4.5 eV, are analysed by using model dielectric functions, augmented by excitonic continuum and free exciton contributions. A strong red-shift of the three wurtzite-type Γ-point transition energies is observed.",

keywords = "Band-to-band transition, Dielectric function, Electron-phonon interaction, Ellipsometry, Temperature dependence, ZnO",

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AU - Schubert, M. M.

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AU - Faltermeier, D.

AU - Benndorf, G.

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AB - We report the temperature dependencies of the fundamental band-to-band transition energies, free exciton broadening, and the below-band-gap refractive index in ZnO. Spectroscopic ellipsometry data, taken from an (0001)-oriented ZnO thin film at temperatures between 5 K and 829 K, and for photon energies from 0.75 eV to 4.5 eV, are analysed by using model dielectric functions, augmented by excitonic continuum and free exciton contributions. A strong red-shift of the three wurtzite-type Γ-point transition energies is observed.

KW - Band-to-band transition

KW - Dielectric function

KW - Electron-phonon interaction

KW - Ellipsometry

KW - Temperature dependence

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BT - Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B

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Temperature-dependence of the refractive index and the optical transitions at the fundamental band-gap of ZnO

Abstract

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