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Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures
T. Hofmann, P. Kühne, S. Schöche, Jr Tai Chen, U. Forsberg, E. Janzén, N. Ben Sedrine, C. M. Herzinger, J. A. Woollam, M. Schubert, V. Darakchieva
Research output: Contribution to journal › Article › peer-review
48
Scopus
citations