Temperature dependent model dielectric function of highly disordered Ga0.52In0.48P

E. Montgomery, C. Krahmer, K. Streubel, T. Hofmann, E. Schubert, M. Schubert

Research output: Contribution to journalArticle

Abstract

We report on the temperature dependence of the dielectric function of Ga0.52In0.48P from room temperature to 500°C, and for photon energies from 0.75 eV to 5 eV. The undoped, highly disordered Ga 0.52In0.48P thin film was grown by metal-organic vapor phase epitaxy lattice matched onto a (001) GaAs substrate. The dielectric function of Ga0.52In0.48P was measured by in-situ spectroscopic ellipsometry, and analyzed using Adachi's composite critical point model. We provide a second-order temperature expansion parameter set for calculation of the Ga0.52In0.48P dielectric function and its temperature dependence, and which may become useful for in situ growth control or optoelectronic device performance evaluation at elevated temperatures. We discuss the temperature-induced shift of critical point transition energy parameters.

Original languageEnglish (US)
Pages (from-to)2859-2862
Number of pages4
JournalThin Solid Films
Volume519
Issue number9
DOIs
StatePublished - Feb 28 2011

Keywords

  • Dielectric function
  • Extinction coefficient
  • GaInP
  • Optical constant
  • Refractive index
  • Spectroscopic ellipsometry
  • Temperature dependence

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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