Temperature dependent model dielectric function of highly disordered Ga0.52In0.48P

E. Montgomery; C. Krahmer; K. Streubel; T. Hofmann; E. Schubert; M. Schubert

doi:10.1016/j.tsf.2010.11.086

Temperature dependent model dielectric function of highly disordered Ga_0.52In_0.48P

E. Montgomery, C. Krahmer, K. Streubel, T. Hofmann, E. Schubert, M. Schubert

Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We report on the temperature dependence of the dielectric function of Ga_0.52In_0.48P from room temperature to 500°C, and for photon energies from 0.75 eV to 5 eV. The undoped, highly disordered Ga _0.52In_0.48P thin film was grown by metal-organic vapor phase epitaxy lattice matched onto a (001) GaAs substrate. The dielectric function of Ga_0.52In_0.48P was measured by in-situ spectroscopic ellipsometry, and analyzed using Adachi's composite critical point model. We provide a second-order temperature expansion parameter set for calculation of the Ga_0.52In_0.48P dielectric function and its temperature dependence, and which may become useful for in situ growth control or optoelectronic device performance evaluation at elevated temperatures. We discuss the temperature-induced shift of critical point transition energy parameters.

Original language	English (US)
Pages (from-to)	2859-2862
Number of pages	4
Journal	Thin Solid Films
Volume	519
Issue number	9
DOIs	https://doi.org/10.1016/j.tsf.2010.11.086
State	Published - Feb 28 2011

Keywords

Dielectric function
Extinction coefficient
GaInP
Optical constant
Refractive index
Spectroscopic ellipsometry
Temperature dependence

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2010.11.086

Cite this

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title = "Temperature dependent model dielectric function of highly disordered Ga0.52In0.48P",

abstract = "We report on the temperature dependence of the dielectric function of Ga0.52In0.48P from room temperature to 500°C, and for photon energies from 0.75 eV to 5 eV. The undoped, highly disordered Ga 0.52In0.48P thin film was grown by metal-organic vapor phase epitaxy lattice matched onto a (001) GaAs substrate. The dielectric function of Ga0.52In0.48P was measured by in-situ spectroscopic ellipsometry, and analyzed using Adachi's composite critical point model. We provide a second-order temperature expansion parameter set for calculation of the Ga0.52In0.48P dielectric function and its temperature dependence, and which may become useful for in situ growth control or optoelectronic device performance evaluation at elevated temperatures. We discuss the temperature-induced shift of critical point transition energy parameters.",

keywords = "Dielectric function, Extinction coefficient, GaInP, Optical constant, Refractive index, Spectroscopic ellipsometry, Temperature dependence",

author = "E. Montgomery and C. Krahmer and K. Streubel and T. Hofmann and E. Schubert and M. Schubert",

year = "2011",

month = feb,

day = "28",

doi = "10.1016/j.tsf.2010.11.086",

language = "English (US)",

volume = "519",

pages = "2859--2862",

journal = "Thin Solid Films",

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publisher = "Elsevier",

number = "9",

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TY - JOUR

T1 - Temperature dependent model dielectric function of highly disordered Ga0.52In0.48P

AU - Montgomery, E.

AU - Krahmer, C.

AU - Streubel, K.

AU - Hofmann, T.

AU - Schubert, E.

AU - Schubert, M.

PY - 2011/2/28

Y1 - 2011/2/28

N2 - We report on the temperature dependence of the dielectric function of Ga0.52In0.48P from room temperature to 500°C, and for photon energies from 0.75 eV to 5 eV. The undoped, highly disordered Ga 0.52In0.48P thin film was grown by metal-organic vapor phase epitaxy lattice matched onto a (001) GaAs substrate. The dielectric function of Ga0.52In0.48P was measured by in-situ spectroscopic ellipsometry, and analyzed using Adachi's composite critical point model. We provide a second-order temperature expansion parameter set for calculation of the Ga0.52In0.48P dielectric function and its temperature dependence, and which may become useful for in situ growth control or optoelectronic device performance evaluation at elevated temperatures. We discuss the temperature-induced shift of critical point transition energy parameters.

AB - We report on the temperature dependence of the dielectric function of Ga0.52In0.48P from room temperature to 500°C, and for photon energies from 0.75 eV to 5 eV. The undoped, highly disordered Ga 0.52In0.48P thin film was grown by metal-organic vapor phase epitaxy lattice matched onto a (001) GaAs substrate. The dielectric function of Ga0.52In0.48P was measured by in-situ spectroscopic ellipsometry, and analyzed using Adachi's composite critical point model. We provide a second-order temperature expansion parameter set for calculation of the Ga0.52In0.48P dielectric function and its temperature dependence, and which may become useful for in situ growth control or optoelectronic device performance evaluation at elevated temperatures. We discuss the temperature-induced shift of critical point transition energy parameters.

KW - Dielectric function

KW - Extinction coefficient

KW - GaInP

KW - Optical constant

KW - Refractive index

KW - Spectroscopic ellipsometry

KW - Temperature dependence

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U2 - 10.1016/j.tsf.2010.11.086

DO - 10.1016/j.tsf.2010.11.086

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VL - 519

SP - 2859

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JO - Thin Solid Films

JF - Thin Solid Films

IS - 9

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