Temperature effect for exciton dynamics in ZnCdSe/ZnSe QWs

Ji Nan Zeng; Yong Feng Lu; Yasuo Oka

doi:10.1117/12.456856

Temperature effect for exciton dynamics in ZnCdSe/ZnSe QWs

Ji Nan Zeng, Yong Feng Lu, Yasuo Oka

Research output: Contribution to journal › Article › peer-review

Abstract

Temperature dependence of photoluminescence (PL) from Zn_1-xCd_xSe/ZnSe Asymmetric Double Quantum Wells (ADQWs) has been studied by using time-resolved spectroscopy. With raising temperature, the different transient behaviors of exciton emission are observed. In the regime of T<40K, the linear increase of lifetimes in both QWs with temperature is interpreted according to J. Feldmann's theory. On the other hand, the nonradiative recombination process leads to decreases of lifetimes and intensities of the NW and WW excitons in the regime of T>40K. The faster decrease of lifetime of the NW exciton is assigned to the thermal-tunneling processes comparing to that of WW exciton. The thermal-tunneling process results from the electron-hole tunneling process due to the enhancement of ionization of exciton with raising temperature. The rate equations including thermal tunneling process are used to explain the experimental data.

Original language	English (US)
Pages (from-to)	43-46
Number of pages	4
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4426
DOIs	https://doi.org/10.1117/12.456856
State	Published - 2002
Externally published	Yes

Keywords

Temperature dependence ot time-resolved photoluminescence (TRPL) spectroscopy
Tunneling process
ZnCdSe/ZnSe ADQWs

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.456856

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title = "Temperature effect for exciton dynamics in ZnCdSe/ZnSe QWs",

abstract = "Temperature dependence of photoluminescence (PL) from Zn1-xCdxSe/ZnSe Asymmetric Double Quantum Wells (ADQWs) has been studied by using time-resolved spectroscopy. With raising temperature, the different transient behaviors of exciton emission are observed. In the regime of T<40K, the linear increase of lifetimes in both QWs with temperature is interpreted according to J. Feldmann's theory. On the other hand, the nonradiative recombination process leads to decreases of lifetimes and intensities of the NW and WW excitons in the regime of T>40K. The faster decrease of lifetime of the NW exciton is assigned to the thermal-tunneling processes comparing to that of WW exciton. The thermal-tunneling process results from the electron-hole tunneling process due to the enhancement of ionization of exciton with raising temperature. The rate equations including thermal tunneling process are used to explain the experimental data.",

keywords = "Temperature dependence ot time-resolved photoluminescence (TRPL) spectroscopy, Tunneling process, ZnCdSe/ZnSe ADQWs",

author = "Zeng, {Ji Nan} and Lu, {Yong Feng} and Yasuo Oka",

year = "2002",

doi = "10.1117/12.456856",

language = "English (US)",

volume = "4426",

pages = "43--46",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

}

TY - JOUR

T1 - Temperature effect for exciton dynamics in ZnCdSe/ZnSe QWs

AU - Zeng, Ji Nan

AU - Lu, Yong Feng

AU - Oka, Yasuo

PY - 2002

Y1 - 2002

N2 - Temperature dependence of photoluminescence (PL) from Zn1-xCdxSe/ZnSe Asymmetric Double Quantum Wells (ADQWs) has been studied by using time-resolved spectroscopy. With raising temperature, the different transient behaviors of exciton emission are observed. In the regime of T<40K, the linear increase of lifetimes in both QWs with temperature is interpreted according to J. Feldmann's theory. On the other hand, the nonradiative recombination process leads to decreases of lifetimes and intensities of the NW and WW excitons in the regime of T>40K. The faster decrease of lifetime of the NW exciton is assigned to the thermal-tunneling processes comparing to that of WW exciton. The thermal-tunneling process results from the electron-hole tunneling process due to the enhancement of ionization of exciton with raising temperature. The rate equations including thermal tunneling process are used to explain the experimental data.

AB - Temperature dependence of photoluminescence (PL) from Zn1-xCdxSe/ZnSe Asymmetric Double Quantum Wells (ADQWs) has been studied by using time-resolved spectroscopy. With raising temperature, the different transient behaviors of exciton emission are observed. In the regime of T<40K, the linear increase of lifetimes in both QWs with temperature is interpreted according to J. Feldmann's theory. On the other hand, the nonradiative recombination process leads to decreases of lifetimes and intensities of the NW and WW excitons in the regime of T>40K. The faster decrease of lifetime of the NW exciton is assigned to the thermal-tunneling processes comparing to that of WW exciton. The thermal-tunneling process results from the electron-hole tunneling process due to the enhancement of ionization of exciton with raising temperature. The rate equations including thermal tunneling process are used to explain the experimental data.

KW - Temperature dependence ot time-resolved photoluminescence (TRPL) spectroscopy

KW - Tunneling process

KW - ZnCdSe/ZnSe ADQWs

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JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

ER -

Temperature effect for exciton dynamics in ZnCdSe/ZnSe QWs

Abstract

Keywords

ASJC Scopus subject areas

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