Abstract
The free-charge carrier mobility, sheet density, and effective mass of a two-dimensional electron gas are exemplarily determined in the spectral range from 640 GHz to 1 THz in a AlGaN/GaN heterostructure using the optical-Hall effect at room temperature. Complementary midinfrared spectroscopic ellipsometry measurements are performed for analysis of heterostructure constituents layer thickness, phonon mode, and free-charge carrier parameters. The electron effective mass is determined to be (0.22±0.04) m0. The high-frequency sheet density and carrier mobility parameters are in good agreement with results from dc electrical Hall effect measurements, indicative for frequency-independent carrier scattering mechanisms of the two-dimensional carrier distribution.
Original language | English (US) |
---|---|
Article number | 092103 |
Journal | Applied Physics Letters |
Volume | 98 |
Issue number | 9 |
DOIs | |
State | Published - Feb 28 2011 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)