Terahertz optical-Hall effect characterization of two-dimensional electron gas properties in AlGaN/GaN high electron mobility transistor structures

S. Schöche, Junxia Shi, A. Boosalis, P. Kühne, C. M. Herzinger, J. A. Woollam, W. J. Schaff, L. F. Eastman, M. Schubert, T. Hofmann

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19 Scopus citations

Abstract

The free-charge carrier mobility, sheet density, and effective mass of a two-dimensional electron gas are exemplarily determined in the spectral range from 640 GHz to 1 THz in a AlGaN/GaN heterostructure using the optical-Hall effect at room temperature. Complementary midinfrared spectroscopic ellipsometry measurements are performed for analysis of heterostructure constituents layer thickness, phonon mode, and free-charge carrier parameters. The electron effective mass is determined to be (0.22±0.04) m0. The high-frequency sheet density and carrier mobility parameters are in good agreement with results from dc electrical Hall effect measurements, indicative for frequency-independent carrier scattering mechanisms of the two-dimensional carrier distribution.

Original languageEnglish (US)
Article number092103
JournalApplied Physics Letters
Volume98
Issue number9
DOIs
StatePublished - Feb 28 2011

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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