Terahertz optical-Hall effect for multiple valley band materials: N-type silicon

P. Kühne, T. Hofmann, C. M. Herzinger, M. Schubert

Research output: Contribution to journalArticlepeer-review

11 Scopus citations


The optical-Hall effect comprises generalized ellipsometry at long wavelengths on samples with free-charge carriers placed within external magnetic fields. Measurement of the anisotropic magneto-optic response allows for the determination of the free-charge carrier properties including spatial anisotropy. In this work we employ the optical-Hall effect at terahertz frequencies for analysis of free-charge carrier properties in multiple valley band materials, for which the optical free-charge carrier contributions originate from multiple Brillouin-zone conduction or valence band minima or maxima, respectively. We investigate exemplarily the room temperature optical-Hall effect in low phosphorous-doped n-type silicon where free electrons are located in six equivalent conduction-band minima near the X-point. We simultaneously determine their free-charge carrier concentration, mobility, and longitudinal and transverse effective mass parameters.

Original languageEnglish (US)
Pages (from-to)2613-2616
Number of pages4
JournalThin Solid Films
Issue number9
StatePublished - Feb 28 2011


  • Anisotropic effective mass
  • Ellipsometry
  • Frequency domain
  • Optical-Hall effect
  • Silicon
  • THz

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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