The band structure of the quasi-one-dimensional layered semiconductor TiS3(001)

Hemian Yi, Takashi Komesu, Simeon Gilbert, Guanhua Hao, Andrew J. Yost, Alexey Lipatov, Alexander Sinitskii, Jose Avila, Chaoyu Chen, Maria C. Asensio, P. A. Dowben

Research output: Contribution to journalArticlepeer-review

40 Scopus citations


The experimental mapping of the band structure of TiS3(001), by momentum resolution nanospot angle resolved photoemission, is presented. The experimental band structure, derived from angle-resolved photoemission, confirms that the top of the valence band is at the center of the Brillouin zone. This trichalcogenide has a rectangular surface Brillouin zone where the effective hole mass along the chain direction is -0.95 ± 0.09 me, while perpendicular to the chain direction, the magnitude of the effective hole mass is much lower at -0.37 ± 0.1 me. The placement of the valence band well below the Fermi level suggests that this is an n-type semiconductor.

Original languageEnglish (US)
Article number052102
JournalApplied Physics Letters
Issue number5
StatePublished - Jan 29 2018

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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