The electric field gradient at iodine impurities in zinc and cadmium

H. Ooms; J. Claes; F. Namavar; M. Rots

doi:10.1007/BF01026462

The electric field gradient at iodine impurities in zinc and cadmium

H. Ooms, J. Claes, F. Namavar, M. Rots

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Abstract

The electric quadrupole interaction at iodine implanted in zinc and cadmium single crystals is investigated, using the β-γ perturbed angular correlation technique. The results show that the implanted¹²⁹Te and¹³²Te isotopes occupy two well-defined sites, identified by the electric field gradient parameters. One fraction of the impurities is substitutionally implanted, with eq_zz=-1.49(9)10¹⁸ and -1.58(15)10¹⁸V/cm², in Zn and Cd respectively. The other fraction is identified as an impurity-divacancy configuration with |eq_zz|=3.81(8)10¹⁸V/cm²; η=0.72(4) for Zn and |eq_zz|=3.55(11)10¹⁸V/cm²; η=0.53(13) for Cd. The electronic enhancement in the electric fieldgradient at the substitutional site equals K=-0.66 and -0.56 respectively and follows the empirical trend of K versus the impurity valence for the s-p elements in Zinc.

Original language	English (US)
Pages (from-to)	1-12
Number of pages	12
Journal	Hyperfine Interactions
Volume	11
Issue number	1
DOIs	https://doi.org/10.1007/BF01026462
State	Published - Jul 1981
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Nuclear and High Energy Physics
Condensed Matter Physics
Physical and Theoretical Chemistry

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10.1007/BF01026462

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title = "The electric field gradient at iodine impurities in zinc and cadmium",

abstract = "The electric quadrupole interaction at iodine implanted in zinc and cadmium single crystals is investigated, using the β-γ perturbed angular correlation technique. The results show that the implanted129Te and132Te isotopes occupy two well-defined sites, identified by the electric field gradient parameters. One fraction of the impurities is substitutionally implanted, with eqzz=-1.49(9)1018 and -1.58(15)1018V/cm2, in Zn and Cd respectively. The other fraction is identified as an impurity-divacancy configuration with |eqzz|=3.81(8)1018V/cm2; η=0.72(4) for Zn and |eqzz|=3.55(11)1018V/cm2; η=0.53(13) for Cd. The electronic enhancement in the electric fieldgradient at the substitutional site equals K=-0.66 and -0.56 respectively and follows the empirical trend of K versus the impurity valence for the s-p elements in Zinc.",

author = "H. Ooms and J. Claes and F. Namavar and M. Rots",

year = "1981",

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T1 - The electric field gradient at iodine impurities in zinc and cadmium

AU - Ooms, H.

AU - Claes, J.

AU - Namavar, F.

AU - Rots, M.

PY - 1981/7

Y1 - 1981/7

N2 - The electric quadrupole interaction at iodine implanted in zinc and cadmium single crystals is investigated, using the β-γ perturbed angular correlation technique. The results show that the implanted129Te and132Te isotopes occupy two well-defined sites, identified by the electric field gradient parameters. One fraction of the impurities is substitutionally implanted, with eqzz=-1.49(9)1018 and -1.58(15)1018V/cm2, in Zn and Cd respectively. The other fraction is identified as an impurity-divacancy configuration with |eqzz|=3.81(8)1018V/cm2; η=0.72(4) for Zn and |eqzz|=3.55(11)1018V/cm2; η=0.53(13) for Cd. The electronic enhancement in the electric fieldgradient at the substitutional site equals K=-0.66 and -0.56 respectively and follows the empirical trend of K versus the impurity valence for the s-p elements in Zinc.

AB - The electric quadrupole interaction at iodine implanted in zinc and cadmium single crystals is investigated, using the β-γ perturbed angular correlation technique. The results show that the implanted129Te and132Te isotopes occupy two well-defined sites, identified by the electric field gradient parameters. One fraction of the impurities is substitutionally implanted, with eqzz=-1.49(9)1018 and -1.58(15)1018V/cm2, in Zn and Cd respectively. The other fraction is identified as an impurity-divacancy configuration with |eqzz|=3.81(8)1018V/cm2; η=0.72(4) for Zn and |eqzz|=3.55(11)1018V/cm2; η=0.53(13) for Cd. The electronic enhancement in the electric fieldgradient at the substitutional site equals K=-0.66 and -0.56 respectively and follows the empirical trend of K versus the impurity valence for the s-p elements in Zinc.

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The electric field gradient at iodine impurities in zinc and cadmium

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