@article{195f2e0fbafe40fd899324f9615a980a,
title = "The electronic properties of Au and Pt metal contacts on quasi-one-dimensional layered TiS3(001)",
abstract = "The interfaces of layered trichalcogenide TiS3(001), with metals Au and Pt, were examined using X-ray photoemission spectroscopy. In spite of the fact that both Au and Pt are large work function metals, no evidence of Schottky barrier formation was found with this n-type semiconductor. Two- and four-terminal field-effect transistor measurements performed on exfoliated few-nm-thick TiS3 crystals using pure Au contacts indicate that Au forms an Ohmic contact on TiS3(001), with negligible contact resistance. The absence of appreciable Schottky barrier formation is attributed to strong interactions with sulfur at the metal-semiconductor interface.",
author = "Gilbert, {Simeon J.} and Alexey Lipatov and Yost, {Andrew J.} and Loes, {Michael J.} and Alexander Sinitskii and Dowben, {Peter A.}",
note = "Funding Information: This research was supported by the National Science Foundation (NSF), through Grant No. NSF-ECCS 1740136, as well as by the nCORE, a wholly owned subsidiary of the Semiconductor Research Corporation (SRC), through the Center on Antiferromagnetic Magneto-electric Memory and Logic task #2760.002. The device fabrication and characterization were performed using instrumentation at the Nebraska Nanoscale Facility, which was supported by the NSF (ECCS-1542182) and the Nebraska Research Initiative. Publisher Copyright: {\textcopyright} 2019 Author(s).",
year = "2019",
month = mar,
day = "11",
doi = "10.1063/1.5090270",
language = "English (US)",
volume = "114",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "10",
}