The excimer laser-induced ripple structures at the interfaces of silicon-dioxide/silicon substrates

Yong Feng Lu, Jian Jun Yu, Wee Kiong Choi

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

Excimer laser-induced surface structures at the interfaces of silicon dioxide/silicon have been investigated experimentally. It is found that a stable, fine and homogeneous ripple structure is preferentially generated under a comparatively larger laser beam. The ripple periodicity seems to have no angular dependence and is enhanced with the increased laser pulses for the first a few pulses. The initial substrate temperature also represents an important parameter which can be used to control the interface ripple structures. The threshold pulse number for the ripple formation at different laser fluence, or at different oxide thickness is studied as well. This study will be helpful in understanding the physics of laser-induced ripple formation, and hence be useful in controlling the ripple structures within the range required for the laser texturing of the high density magnetic recording media.

Original languageEnglish (US)
Pages (from-to)3471-3474
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume37
Issue number6 A
DOIs
StatePublished - Jun 1998

Keywords

  • Far-ultraviolet radiation
  • Interface
  • Interface structure and roughness
  • Laser surface modification
  • Microstructure
  • Silicon-dioxide film
  • Silicon-dioxide/silicon system

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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