The inertial-mass scale for free-charge-carriers in semiconductor heterostructures

T. Hofmann, M. Schubert, C. Von Middendorff, G. Leibiger, V. Gottschalch, C. M. Herzinger, A. Lindsay, E. O'Reilly

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

Generalized magnetooptic Mueller matrix ellipsometry at far-infrared wavelengths is presented for optical determination of free-charge-carrier properties in complex-layered semiconductor heterostructures. Upon model analysis of the ellipsometry data we obtain access to the free-charge-carrier density, inertial ("effective") mass, and mobility parameters of the individual material constituents, and within heterostructures composed of multiple layers. Our approach is demonstrated exemplarily for BInGaAs, a material of contemporary interest for multiple-junction solar cell structures, where a dramatic increase of the Γ-point conduction band effective mass is reported.

Original languageEnglish (US)
Title of host publicationPHYSICS OF SEMICONDUCTORS
Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
Pages455-456
Number of pages2
DOIs
StatePublished - Jun 30 2005
Externally publishedYes
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: Jul 26 2004Jul 30 2004

Publication series

NameAIP Conference Proceedings
Volume772
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

OtherPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
Country/TerritoryUnited States
CityFlagstaff, AZ
Period7/26/047/30/04

ASJC Scopus subject areas

  • General Physics and Astronomy

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