Abstract
A technique to measure thickness uniformity and thermal emissive control for high quality masks, with adequate accuracy and precision is demonstrated. It is based on infrared variable angle spectroscopic ellipsometry (IR-VASE). Refractive index and the thickness of silicon membrane was determined. Depth profile of the optical constants and of the concentration of free carriers in membranes was also evaluated.
Original language | English (US) |
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Pages (from-to) | 3259-3263 |
Number of pages | 5 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 18 |
Issue number | 6 |
DOIs | |
State | Published - Nov 2000 |
Externally published | Yes |
Event | 44th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication - Rancho Mirage, CA, USA Duration: May 30 2000 → Jun 2 2000 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering