Transition from negative magnetoresistance behavior to positive behavior in Co20(Cu1-xGex)80 ribbons

J. He; Z. D. Zhang; J. P. Liu; D. J. Sellmyer

doi:10.1063/1.1458682

Transition from negative magnetoresistance behavior to positive behavior in Co₂₀(Cu_1-xGe_x)₈₀ ribbons

J. He, Z. D. Zhang, J. P. Liu, D. J. Sellmyer

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We report a transition of the giant magnetoresistance (GMR) behavior in nanocrystalline Co₂₀(Cu_1-xGe_x)₈₀ ribbons from negative to positive, as the semiconductor Ge substitutes for the Cu matrix. The growth of the hexagonal Co₃Ge₂ compound leads to a change of the physical origin of the GMR. The normal spin-dependent transport behavior in the CoCu granular system evolves into Coulomb blockade behavior of electronic tunneling in ribbons with a Co/Co₃Ge ₂/Co junctionlike configuration.

Original language	English (US)
Pages (from-to)	1779-1781
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	10
DOIs	https://doi.org/10.1063/1.1458682
State	Published - Mar 11 2002

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Transition from negative magnetoresistance behavior to positive behavior in Co20(Cu1-xGex)80 ribbons",

abstract = "We report a transition of the giant magnetoresistance (GMR) behavior in nanocrystalline Co20(Cu1-xGex)80 ribbons from negative to positive, as the semiconductor Ge substitutes for the Cu matrix. The growth of the hexagonal Co3Ge2 compound leads to a change of the physical origin of the GMR. The normal spin-dependent transport behavior in the CoCu granular system evolves into Coulomb blockade behavior of electronic tunneling in ribbons with a Co/Co3Ge 2/Co junctionlike configuration.",

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AU - He, J.

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AU - Liu, J. P.

AU - Sellmyer, D. J.

PY - 2002/3/11

Y1 - 2002/3/11

N2 - We report a transition of the giant magnetoresistance (GMR) behavior in nanocrystalline Co20(Cu1-xGex)80 ribbons from negative to positive, as the semiconductor Ge substitutes for the Cu matrix. The growth of the hexagonal Co3Ge2 compound leads to a change of the physical origin of the GMR. The normal spin-dependent transport behavior in the CoCu granular system evolves into Coulomb blockade behavior of electronic tunneling in ribbons with a Co/Co3Ge 2/Co junctionlike configuration.

AB - We report a transition of the giant magnetoresistance (GMR) behavior in nanocrystalline Co20(Cu1-xGex)80 ribbons from negative to positive, as the semiconductor Ge substitutes for the Cu matrix. The growth of the hexagonal Co3Ge2 compound leads to a change of the physical origin of the GMR. The normal spin-dependent transport behavior in the CoCu granular system evolves into Coulomb blockade behavior of electronic tunneling in ribbons with a Co/Co3Ge 2/Co junctionlike configuration.

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Transition from negative magnetoresistance behavior to positive behavior in Co₂₀(Cu_1-xGe_x)₈₀ ribbons

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