Transmission electron microscopy study of GaN on SiC on SIMOX grown by metalorganic chemical vapor deposition

W. L. Zhou, P. Pirouz, F. Namavar, P. C. Colter, M. Yoganathan, M. W. Leksono, J. I. Pankove

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

SiC was grown on the top Si layer of SIMOX by carbonization followed by chemical vapor deposition (CVD). Subsequently, GaN was deposited on SiC by metalorganic (MO)CVD to produce a GaN/SiC/Si/SiO2/Si multilayer structure. This multilayer film was investigated by cross-sectional conventional transmission electron microscopy (TEM) and high resolution (HR)TEM. The GaN layer was found to consist of predominately hexagonal gallium nitride (h-GaN) grains with a smaller fraction of the cubic phase (c-GaN). The orientation relationship between most of the h-GaN grains was found to be (0001)GaN//(111)SiC; [112̄0]GaN//[11̄0]SiC. A preliminary characterization of the defects in h-GaN was also carried out.

Original languageEnglish (US)
Pages (from-to)1239-1242
Number of pages4
JournalMaterials Science Forum
Volume264-268
Issue numberPART 2
DOIs
StatePublished - 1998

Keywords

  • Chemical Vapor Deposition
  • Defects
  • GaN
  • SIMOX
  • SiC
  • TEM

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Transmission electron microscopy study of GaN on SiC on SIMOX grown by metalorganic chemical vapor deposition'. Together they form a unique fingerprint.

Cite this