Transmission electron microscopy study of GaN on SiC on SIMOX grown by metalorganic chemical vapor deposition

W. L. Zhou; P. Pirouz; F. Namavar; P. C. Colter; M. Yoganathan; M. W. Leksono; J. I. Pankove

doi:10.4028/www.scientific.net/msf.264-268.1239

Transmission electron microscopy study of GaN on SiC on SIMOX grown by metalorganic chemical vapor deposition

W. L. Zhou, P. Pirouz, F. Namavar, P. C. Colter, M. Yoganathan, M. W. Leksono, J. I. Pankove

Orthopaedic Surgery & Rehabilitation

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3 Scopus citations

Abstract

SiC was grown on the top Si layer of SIMOX by carbonization followed by chemical vapor deposition (CVD). Subsequently, GaN was deposited on SiC by metalorganic (MO)CVD to produce a GaN/SiC/Si/SiO₂/Si multilayer structure. This multilayer film was investigated by cross-sectional conventional transmission electron microscopy (TEM) and high resolution (HR)TEM. The GaN layer was found to consist of predominately hexagonal gallium nitride (h-GaN) grains with a smaller fraction of the cubic phase (c-GaN). The orientation relationship between most of the h-GaN grains was found to be (0001)_GaN//(111)_SiC; [112̄0]_GaN//[11̄0]_SiC. A preliminary characterization of the defects in h-GaN was also carried out.

Original language	English (US)
Pages (from-to)	1239-1242
Number of pages	4
Journal	Materials Science Forum
Volume	264-268
Issue number	PART 2
DOIs	https://doi.org/10.4028/www.scientific.net/msf.264-268.1239
State	Published - 1998

Keywords

Chemical Vapor Deposition
Defects
GaN
SIMOX
SiC
TEM

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Transmission electron microscopy study of GaN on SiC on SIMOX grown by metalorganic chemical vapor deposition",

abstract = "SiC was grown on the top Si layer of SIMOX by carbonization followed by chemical vapor deposition (CVD). Subsequently, GaN was deposited on SiC by metalorganic (MO)CVD to produce a GaN/SiC/Si/SiO2/Si multilayer structure. This multilayer film was investigated by cross-sectional conventional transmission electron microscopy (TEM) and high resolution (HR)TEM. The GaN layer was found to consist of predominately hexagonal gallium nitride (h-GaN) grains with a smaller fraction of the cubic phase (c-GaN). The orientation relationship between most of the h-GaN grains was found to be (0001)GaN//(111)SiC; [11{\=2}0]GaN//[1{\=1}0]SiC. A preliminary characterization of the defects in h-GaN was also carried out.",

keywords = "Chemical Vapor Deposition, Defects, GaN, SIMOX, SiC, TEM",

author = "Zhou, {W. L.} and P. Pirouz and F. Namavar and Colter, {P. C.} and M. Yoganathan and Leksono, {M. W.} and Pankove, {J. I.}",

year = "1998",

doi = "10.4028/www.scientific.net/msf.264-268.1239",

language = "English (US)",

volume = "264-268",

pages = "1239--1242",

journal = "Materials Science Forum",

issn = "0255-5476",

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TY - JOUR

T1 - Transmission electron microscopy study of GaN on SiC on SIMOX grown by metalorganic chemical vapor deposition

AU - Zhou, W. L.

AU - Pirouz, P.

AU - Namavar, F.

AU - Colter, P. C.

AU - Yoganathan, M.

AU - Leksono, M. W.

AU - Pankove, J. I.

PY - 1998

Y1 - 1998

N2 - SiC was grown on the top Si layer of SIMOX by carbonization followed by chemical vapor deposition (CVD). Subsequently, GaN was deposited on SiC by metalorganic (MO)CVD to produce a GaN/SiC/Si/SiO2/Si multilayer structure. This multilayer film was investigated by cross-sectional conventional transmission electron microscopy (TEM) and high resolution (HR)TEM. The GaN layer was found to consist of predominately hexagonal gallium nitride (h-GaN) grains with a smaller fraction of the cubic phase (c-GaN). The orientation relationship between most of the h-GaN grains was found to be (0001)GaN//(111)SiC; [112̄0]GaN//[11̄0]SiC. A preliminary characterization of the defects in h-GaN was also carried out.

AB - SiC was grown on the top Si layer of SIMOX by carbonization followed by chemical vapor deposition (CVD). Subsequently, GaN was deposited on SiC by metalorganic (MO)CVD to produce a GaN/SiC/Si/SiO2/Si multilayer structure. This multilayer film was investigated by cross-sectional conventional transmission electron microscopy (TEM) and high resolution (HR)TEM. The GaN layer was found to consist of predominately hexagonal gallium nitride (h-GaN) grains with a smaller fraction of the cubic phase (c-GaN). The orientation relationship between most of the h-GaN grains was found to be (0001)GaN//(111)SiC; [112̄0]GaN//[11̄0]SiC. A preliminary characterization of the defects in h-GaN was also carried out.

KW - Chemical Vapor Deposition

KW - Defects

KW - GaN

KW - SIMOX

KW - SiC

KW - TEM

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AN - SCOPUS:0031648662

SN - 0255-5476

VL - 264-268

SP - 1239

EP - 1242

JO - Materials Science Forum

JF - Materials Science Forum

IS - PART 2

ER -

Transmission electron microscopy study of GaN on SiC on SIMOX grown by metalorganic chemical vapor deposition

Abstract

Keywords

ASJC Scopus subject areas

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