Trapping dendrimers in inorganic matrices: DAB-Am-n/zinc arsenate composites

G. Larsen; R. Spretz; E. Lotero

doi:10.1021/cm0103040

Trapping dendrimers in inorganic matrices: DAB-Am-n/zinc arsenate composites

G. Larsen, R. Spretz, E. Lotero

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Layered dendrimer-loaded zinc arsenates (ZnAs) were synthesized under hydrothermal conditions. The so-called DAB-Am-n family of dendrimers is used to produce ZnAs solids with variable interlayer distances. Analysis of the 00k X-ray diffraction reflections reveals that the higher-generation DAB-Am-n dendrimers are "squeezed" between the ZnAs layers, judging from the observation of interlayer spacings that increase more slowly with dendrimer generation than the actual average diameters of the free dendrimers. Transmission electron microscopy shows that, under the synthetic conditions adopted here, the ZnAs sheets are subject to some level of bending and defects. The temperature-programmed oxidation patterns and elemental analysis of these materials are also discussed.

Original language	English (US)
Pages (from-to)	4077-4082
Number of pages	6
Journal	Chemistry of Materials
Volume	13
Issue number	11
DOIs	https://doi.org/10.1021/cm0103040
State	Published - 2001

ASJC Scopus subject areas

Chemistry(all)
Chemical Engineering(all)
Materials Chemistry

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