Trapping dendrimers in inorganic matrices: DAB-Am-n/zinc arsenate composites

G. Larsen; R. Spretz; E. Lotero

doi:10.1021/cm0103040

Trapping dendrimers in inorganic matrices: DAB-Am-n/zinc arsenate composites

G. Larsen, R. Spretz, E. Lotero

Research output: Contribution to journal › Article

6 Scopus citations

Abstract

Layered dendrimer-loaded zinc arsenates (ZnAs) were synthesized under hydrothermal conditions. The so-called DAB-Am-n family of dendrimers is used to produce ZnAs solids with variable interlayer distances. Analysis of the 00k X-ray diffraction reflections reveals that the higher-generation DAB-Am-n dendrimers are "squeezed" between the ZnAs layers, judging from the observation of interlayer spacings that increase more slowly with dendrimer generation than the actual average diameters of the free dendrimers. Transmission electron microscopy shows that, under the synthetic conditions adopted here, the ZnAs sheets are subject to some level of bending and defects. The temperature-programmed oxidation patterns and elemental analysis of these materials are also discussed.

Original language	English (US)
Pages (from-to)	4077-4082
Number of pages	6
Journal	Chemistry of Materials
Volume	13
Issue number	11
DOIs	https://doi.org/10.1021/cm0103040
State	Published - Dec 10 2001

ASJC Scopus subject areas

Chemistry(all)
Chemical Engineering(all)
Materials Chemistry

Access to Document

10.1021/cm0103040

Fingerprint Dive into the research topics of 'Trapping dendrimers in inorganic matrices: DAB-Am-n/zinc arsenate composites'. Together they form a unique fingerprint.

Cite this

Larsen, G., Spretz, R., & Lotero, E. (2001). Trapping dendrimers in inorganic matrices: DAB-Am-n/zinc arsenate composites. Chemistry of Materials, 13(11), 4077-4082. https://doi.org/10.1021/cm0103040

@article{8029d6d91e524dafbac88cdd01368fa2,

title = "Trapping dendrimers in inorganic matrices: DAB-Am-n/zinc arsenate composites",

abstract = "Layered dendrimer-loaded zinc arsenates (ZnAs) were synthesized under hydrothermal conditions. The so-called DAB-Am-n family of dendrimers is used to produce ZnAs solids with variable interlayer distances. Analysis of the 00k X-ray diffraction reflections reveals that the higher-generation DAB-Am-n dendrimers are {"}squeezed{"} between the ZnAs layers, judging from the observation of interlayer spacings that increase more slowly with dendrimer generation than the actual average diameters of the free dendrimers. Transmission electron microscopy shows that, under the synthetic conditions adopted here, the ZnAs sheets are subject to some level of bending and defects. The temperature-programmed oxidation patterns and elemental analysis of these materials are also discussed.",

author = "G. Larsen and R. Spretz and E. Lotero",

year = "2001",

month = dec,

day = "10",

doi = "10.1021/cm0103040",

language = "English (US)",

volume = "13",

pages = "4077--4082",

journal = "Chemistry of Materials",

issn = "0897-4756",

publisher = "American Chemical Society",

number = "11",

}

TY - JOUR

T1 - Trapping dendrimers in inorganic matrices

T2 - DAB-Am-n/zinc arsenate composites

AU - Larsen, G.

AU - Spretz, R.

AU - Lotero, E.

PY - 2001/12/10

Y1 - 2001/12/10

N2 - Layered dendrimer-loaded zinc arsenates (ZnAs) were synthesized under hydrothermal conditions. The so-called DAB-Am-n family of dendrimers is used to produce ZnAs solids with variable interlayer distances. Analysis of the 00k X-ray diffraction reflections reveals that the higher-generation DAB-Am-n dendrimers are "squeezed" between the ZnAs layers, judging from the observation of interlayer spacings that increase more slowly with dendrimer generation than the actual average diameters of the free dendrimers. Transmission electron microscopy shows that, under the synthetic conditions adopted here, the ZnAs sheets are subject to some level of bending and defects. The temperature-programmed oxidation patterns and elemental analysis of these materials are also discussed.

AB - Layered dendrimer-loaded zinc arsenates (ZnAs) were synthesized under hydrothermal conditions. The so-called DAB-Am-n family of dendrimers is used to produce ZnAs solids with variable interlayer distances. Analysis of the 00k X-ray diffraction reflections reveals that the higher-generation DAB-Am-n dendrimers are "squeezed" between the ZnAs layers, judging from the observation of interlayer spacings that increase more slowly with dendrimer generation than the actual average diameters of the free dendrimers. Transmission electron microscopy shows that, under the synthetic conditions adopted here, the ZnAs sheets are subject to some level of bending and defects. The temperature-programmed oxidation patterns and elemental analysis of these materials are also discussed.

UR - http://www.scopus.com/inward/record.url?scp=0035185308&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035185308&partnerID=8YFLogxK

U2 - 10.1021/cm0103040

DO - 10.1021/cm0103040

M3 - Article

AN - SCOPUS:0035185308

VL - 13

SP - 4077

EP - 4082

JO - Chemistry of Materials

JF - Chemistry of Materials

SN - 0897-4756

IS - 11

ER -