Tuning magnetic microstructures of reference layer in magnetic tunneling junctions

L. Yuan, Y. S. Lin, Dexin Wang, S. H. Liou

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

Magnetic microstructures in the reference layer in magnetic tunneling junctions (MTJs) are tuned by a reversal field under ambient conditions to investigate their effects on the magnetoresistance (MR) and the exchange coupling field (HE) between the reference layer and the free layer. Magnetization changes in the reference layer can be probed by measuring minor MR loops. The results show the HE of the minor MR loops versus the applied reversal field changes from negative to positive and crosses zero. These results can be explained by the magnetic inhomogeneities at the interface between anti-ferromagnetic/pinned-ferromagnetic layers, which causes the partial magnetization reversal in the reference layer.

Original languageEnglish (US)
Pages (from-to)2788-2790
Number of pages3
JournalIEEE Transactions on Magnetics
Volume43
Issue number6
DOIs
StatePublished - Jun 1 2007

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Keywords

  • Exchange coupling
  • Magnetic microstructure
  • Magnetic tunneling junction

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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