Tunneling magnetoresistance sensors with different coupled free layers

Yen Fu Liu; Xiaolu Yin; Yi Yang; Dan Ewing; Paul J. De Rego; Sy Hwang Liou

doi:10.1063/1.4977774

Tunneling magnetoresistance sensors with different coupled free layers

Yen Fu Liu, Xiaolu Yin, Yi Yang, Dan Ewing, Paul J. De Rego, Sy Hwang Liou

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Large differences of magnetic coercivity (H_C), exchange coupling field (H_E), and tunneling magnetoresistance ratio (TMR) in magnetic tunnel junctions with different coupled free layers are discussed. We demonstrate that the magnetization behavior of the free layer is not only dominated by the interfacial barrier layer but also affected largely by the magnetic or non-magnetic coupled free layers. All these parameters are sensitively controlled by the magnetic nanostructure, which can be tuned also by the magnetic annealing process. The optimized sensors exhibit a large field sensitivity of up to 261%/mT in the region of the reversal synthetic ferrimagnet at the pinned layers.

Original language	English (US)
Article number	056666
Journal	AIP Advances
Volume	7
Issue number	5
DOIs	https://doi.org/10.1063/1.4977774
State	Published - May 1 2017

ASJC Scopus subject areas

General Physics and Astronomy

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@article{a5deaa5e62d24cad8831b06a1a79830f,

title = "Tunneling magnetoresistance sensors with different coupled free layers",

abstract = "Large differences of magnetic coercivity (HC), exchange coupling field (HE), and tunneling magnetoresistance ratio (TMR) in magnetic tunnel junctions with different coupled free layers are discussed. We demonstrate that the magnetization behavior of the free layer is not only dominated by the interfacial barrier layer but also affected largely by the magnetic or non-magnetic coupled free layers. All these parameters are sensitively controlled by the magnetic nanostructure, which can be tuned also by the magnetic annealing process. The optimized sensors exhibit a large field sensitivity of up to 261%/mT in the region of the reversal synthetic ferrimagnet at the pinned layers.",

author = "Liu, {Yen Fu} and Xiaolu Yin and Yi Yang and Dan Ewing and {De Rego}, {Paul J.} and Liou, {Sy Hwang}",

note = "Publisher Copyright: {\textcopyright} 2017 Author(s).",

year = "2017",

month = may,

day = "1",

doi = "10.1063/1.4977774",

language = "English (US)",

volume = "7",

journal = "AIP Advances",

issn = "2158-3226",

publisher = "American Institute of Physics",

number = "5",

}

TY - JOUR

T1 - Tunneling magnetoresistance sensors with different coupled free layers

AU - Liu, Yen Fu

AU - Yin, Xiaolu

AU - Yang, Yi

AU - Ewing, Dan

AU - De Rego, Paul J.

AU - Liou, Sy Hwang

PY - 2017/5/1

Y1 - 2017/5/1

N2 - Large differences of magnetic coercivity (HC), exchange coupling field (HE), and tunneling magnetoresistance ratio (TMR) in magnetic tunnel junctions with different coupled free layers are discussed. We demonstrate that the magnetization behavior of the free layer is not only dominated by the interfacial barrier layer but also affected largely by the magnetic or non-magnetic coupled free layers. All these parameters are sensitively controlled by the magnetic nanostructure, which can be tuned also by the magnetic annealing process. The optimized sensors exhibit a large field sensitivity of up to 261%/mT in the region of the reversal synthetic ferrimagnet at the pinned layers.

AB - Large differences of magnetic coercivity (HC), exchange coupling field (HE), and tunneling magnetoresistance ratio (TMR) in magnetic tunnel junctions with different coupled free layers are discussed. We demonstrate that the magnetization behavior of the free layer is not only dominated by the interfacial barrier layer but also affected largely by the magnetic or non-magnetic coupled free layers. All these parameters are sensitively controlled by the magnetic nanostructure, which can be tuned also by the magnetic annealing process. The optimized sensors exhibit a large field sensitivity of up to 261%/mT in the region of the reversal synthetic ferrimagnet at the pinned layers.

UR - http://www.scopus.com/inward/record.url?scp=85014496500&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85014496500&partnerID=8YFLogxK

U2 - 10.1063/1.4977774

DO - 10.1063/1.4977774

M3 - Article

AN - SCOPUS:85014496500

SN - 2158-3226

VL - 7

JO - AIP Advances

JF - AIP Advances

IS - 5

M1 - 056666

ER -

Tunneling magnetoresistance sensors with different coupled free layers

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