Ultrahigh-density sub-10 nm nanowire array formation via surface-controlled phase separation

Yuan Tian, Pinaki Mukherjee, Tanjore V. Jayaraman, Zhanping Xu, Yongsheng Yu, Li Tan, David J. Sellmyer, Jeffrey E. Shield

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

We present simple, self-assembled, and robust fabrication of ultrahigh density cobalt nanowire arrays. The binary Co-Al and Co-Si systems phase-separate during physical vapor deposition, resulting in Co nanowire arrays with average diameter as small as 4.9 nm and nanowire density on the order of 1016/m2. The nanowire diameters were controlled by moderating the surface diffusivity, which affected the lateral diffusion lengths. High resolution transmission electron microscopy reveals that the Co nanowires formed in the face-centered cubic structure. Elemental mapping showed that in both systems the nanowires consisted of Co with undetectable Al or Si and that the matrix consisted of Al with no distinguishable Co in the Co-Al system and a mixture of Si and Co in the Co-Si system. Magnetic measurements clearly indicate anisotropic behavior consistent with shape anisotropy. The dynamics of nanowire growth, simulated using an Ising model, is consistent with the experimental phase and geometry of the nanowires.

Original languageEnglish (US)
Pages (from-to)4328-4333
Number of pages6
JournalNano Letters
Volume14
Issue number8
DOIs
StatePublished - Aug 13 2014

Keywords

  • Ising model
  • Nanowires
  • magnetic anisotropy
  • phase-separation

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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  • Cite this

    Tian, Y., Mukherjee, P., Jayaraman, T. V., Xu, Z., Yu, Y., Tan, L., Sellmyer, D. J., & Shield, J. E. (2014). Ultrahigh-density sub-10 nm nanowire array formation via surface-controlled phase separation. Nano Letters, 14(8), 4328-4333. https://doi.org/10.1021/nl501128c