Ultrathin low energy SIMOX for low cost, high density applications

Fereydoon Namavar, N. M. Kalkhoran, A. Cremins

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Silicon-on-insulator (SOI) materials made by standard energy (150 to 200 keV) separation by implantation of oxygen (SIMOX) processes have shown great promise for meeting the needs of radiation-hard microelectronics. Since much smaller doses are required, low energy SIMOX (LES) reduces cost, improves radiation hardness, and increases the throughput of any ion implanter. The process can also produce high quality thin SIMOX structures that are of particular interest for fully depleted and submicron device structures. In this paper, we address the formation as well as the material and electrical characterization of LES wafers and compare them with standard SIMOX wafers.

Original languageEnglish (US)
Title of host publicationMaterials Synthesis and Processing Using Ion Beams
EditorsAnthony F. Garito, Alex K-Y. Jen, Charles Y-C. Lee, Larry R. Dalton
PublisherPubl by Materials Research Society
Pages1053-1058
Number of pages6
ISBN (Print)1558992154
StatePublished - 1994
EventProceedings of the MRS 1993 Fall Meeting - Boston, MA, USA
Duration: Nov 29 1993Dec 3 1993

Publication series

NameMaterials Research Society Symposium Proceedings
Volume316
ISSN (Print)0272-9172

Other

OtherProceedings of the MRS 1993 Fall Meeting
CityBoston, MA, USA
Period11/29/9312/3/93

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Namavar, F., Kalkhoran, N. M., & Cremins, A. (1994). Ultrathin low energy SIMOX for low cost, high density applications. In A. F. Garito, A. K-Y. Jen, C. Y-C. Lee, & L. R. Dalton (Eds.), Materials Synthesis and Processing Using Ion Beams (pp. 1053-1058). (Materials Research Society Symposium Proceedings; Vol. 316). Publ by Materials Research Society.