Unravelling the free electron behavior in InN

V. Darakchieva; T. Hofmann; M. Schubert; B. E. Sernelius; F. Giuliani; M. Y. Xie; P. O.Å Persson; B. Monemar; W. J. Schaff; C. L. Hsiao; L. C. Chen; Y. Nanishi

doi:10.1109/COMMAD.2008.4802099

Unravelling the free electron behavior in InN

V. Darakchieva, T. Hofmann, M. Schubert, B. E. Sernelius, F. Giuliani, M. Y. Xie, P. O.Å Persson, B. Monemar, W. J. Schaff, C. L. Hsiao, L. C. Chen, Y. Nanishi

Electrical & Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Precise measurement of the optical Hall effect in InN using magneto-optical generalized ellipsometry at IR and THz wavelengths, allows us to decouple the surface accumulation and bulk electron densities in InN films by non-contact optical means and further to precisely measure the effective mass and mobilities for polarizations parallel and perpendicular to the optical axis. Studies of InN films with different thicknesses, free electron densities and surface orientations enable an intricate picture of InN free electron properties to emerge. Striking findings on the scaling factors of the bulk electron densities with film thickness further supported by transmission electron microscopy point to an additional thickness dependent doping mechanism unrelated to dislocations. Surface electron accumulation is observed to occur not only at polar but also at non-polar and semi-polar wurtzite InN, and zinc blende InN surfaces. The persistent surface electron density shows a complex behavior with bulk density and surface orientation. This behavior might be exploited for tuning the surface charge in InN.

Original language	English (US)
Title of host publication	Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08
Pages	90-97
Number of pages	8
DOIs	https://doi.org/10.1109/COMMAD.2008.4802099
State	Published - 2008
Event	2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08 - Sydney, NSW, Australia Duration: Jul 28 2008 → Aug 1 2008

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Other

Other	2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08
Country	Australia
City	Sydney, NSW
Period	7/28/08 → 8/1/08

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/COMMAD.2008.4802099

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Darakchieva, V., Hofmann, T., Schubert, M., Sernelius, B. E., Giuliani, F., Xie, M. Y., Persson, P. O. Å., Monemar, B., Schaff, W. J., Hsiao, C. L., Chen, L. C., & Nanishi, Y. (2008). Unravelling the free electron behavior in InN. In Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08 (pp. 90-97). [4802099] (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2008.4802099

Unravelling the free electron behavior in InN. / Darakchieva, V.; Hofmann, T.; Schubert, M.; Sernelius, B. E.; Giuliani, F.; Xie, M. Y.; Persson, P. O.Å; Monemar, B.; Schaff, W. J.; Hsiao, C. L.; Chen, L. C.; Nanishi, Y.

Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08. 2008. p. 90-97 4802099 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Darakchieva, V, Hofmann, T, Schubert, M, Sernelius, BE, Giuliani, F, Xie, MY, Persson, POÅ, Monemar, B, Schaff, WJ, Hsiao, CL, Chen, LC & Nanishi, Y 2008, Unravelling the free electron behavior in InN. in Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08., 4802099, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 90-97, 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08, Sydney, NSW, Australia, 7/28/08. https://doi.org/10.1109/COMMAD.2008.4802099

Darakchieva V, Hofmann T, Schubert M, Sernelius BE, Giuliani F, Xie MY et al. Unravelling the free electron behavior in InN. In Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08. 2008. p. 90-97. 4802099. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2008.4802099

Darakchieva, V. ; Hofmann, T. ; Schubert, M. ; Sernelius, B. E. ; Giuliani, F. ; Xie, M. Y. ; Persson, P. O.Å ; Monemar, B. ; Schaff, W. J. ; Hsiao, C. L. ; Chen, L. C. ; Nanishi, Y. / Unravelling the free electron behavior in InN. Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08. 2008. pp. 90-97 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

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abstract = "Precise measurement of the optical Hall effect in InN using magneto-optical generalized ellipsometry at IR and THz wavelengths, allows us to decouple the surface accumulation and bulk electron densities in InN films by non-contact optical means and further to precisely measure the effective mass and mobilities for polarizations parallel and perpendicular to the optical axis. Studies of InN films with different thicknesses, free electron densities and surface orientations enable an intricate picture of InN free electron properties to emerge. Striking findings on the scaling factors of the bulk electron densities with film thickness further supported by transmission electron microscopy point to an additional thickness dependent doping mechanism unrelated to dislocations. Surface electron accumulation is observed to occur not only at polar but also at non-polar and semi-polar wurtzite InN, and zinc blende InN surfaces. The persistent surface electron density shows a complex behavior with bulk density and surface orientation. This behavior might be exploited for tuning the surface charge in InN.",

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AU - Giuliani, F.

AU - Xie, M. Y.

AU - Persson, P. O.Å

AU - Monemar, B.

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AB - Precise measurement of the optical Hall effect in InN using magneto-optical generalized ellipsometry at IR and THz wavelengths, allows us to decouple the surface accumulation and bulk electron densities in InN films by non-contact optical means and further to precisely measure the effective mass and mobilities for polarizations parallel and perpendicular to the optical axis. Studies of InN films with different thicknesses, free electron densities and surface orientations enable an intricate picture of InN free electron properties to emerge. Striking findings on the scaling factors of the bulk electron densities with film thickness further supported by transmission electron microscopy point to an additional thickness dependent doping mechanism unrelated to dislocations. Surface electron accumulation is observed to occur not only at polar but also at non-polar and semi-polar wurtzite InN, and zinc blende InN surfaces. The persistent surface electron density shows a complex behavior with bulk density and surface orientation. This behavior might be exploited for tuning the surface charge in InN.

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