Using Light for Better Programming of Ferroelectric Devices: Optoelectronic MoS2-Pb(Zr,Ti)O3 Memories with Improved On–Off Ratios

Alexey Lipatov, Nataliia S. Vorobeva, Tao Li, Alexei Gruverman, Alexander Sinitskii

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Ferroelectric (FE) devices are conventionally switched by an application of an electric field. However, the recent discoveries of light–matter interactions in heterostructures based on 2D semiconductors and FE materials open new opportunities for using light as an additional tool for device programming. Recently, a purely optical switching of FE polarization in heterostructures comprising 2D MoS2 and FE oxide perovskites, such as BaTiO3 and Pb(Zr,Ti)O3 (PZT), was demonstrated. In this work, it is investigated whether this optical switching has a practical value and can be used to improve functional characteristics of MoS2-PZT FE field-effect transistors for nonvolatile memory applications. It is demonstrated that the combined use of an electrical field and visible light improves the nonvolatile ON/OFF ratios in MoS2-PZT memories by several orders of magnitude compared to their purely electrical operation. The memories are read at zero gate voltage (VG) in darkness, but their ON and OFF currents, which routinely varied for different devices by over 105, are achieved by programming at the same VG = −6 V with (ON state) and without (OFF state) light illumination, demonstrating its crucial importance. The light can likely serve as an important tool for better programming of a large variety of other semiconductor-FE devices.

Original languageEnglish (US)
Article number2001223
JournalAdvanced Electronic Materials
Volume7
Issue number5
DOIs
StatePublished - May 2021

Keywords

  • ferroelectric memory
  • field-effect transistors
  • lead zirconium titanate
  • molybdenum disulfide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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