UV-VUV spectroscopic ellipsometry of ternary MgxZn 1-xO (0≤x≤0.53) thin films

R. Schmidt-Grund, M. Schubert, B. Rheinländer, D. Fritsch, H. Schmidt, E. M. Kaidashev, M. Lorenz, C. M. Herzinger, M. Grundmann

Research output: Contribution to journalConference articlepeer-review

41 Scopus citations


The ordinary optical dielectric functions of pulsed-laser-deposition grown wurtzite c-plane MgxZn1-xO (0≤x≤0.53) thin films have been determined by using spectroscopic ellipsometry in the photon energy range from 4.5 to 9.5 eV. The dielectric functions reveal features which resemble those previously detected in uniaxial AlGaN and identified as E 1- and E2-type band-to-band transitions with no remarkable dependence of the transition energy on Mg content x. The E1- and E2-type transitions for ZnO are compared with pseudopotential band-structure calculations.

Original languageEnglish (US)
Pages (from-to)500-504
Number of pages5
JournalThin Solid Films
StatePublished - May 1 2004
Externally publishedYes
EventThe 3rd International Conference on Spectroscopic Ellipsometry - Vienna, Austria
Duration: Jul 6 2003Jul 11 2003


  • Dielectric function
  • Ellipsometry
  • MgZnO
  • Optical properties
  • Vacuum ultraviolet
  • Zinc oxide (ZnO)
  • ZnMgO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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