Abstract
The sensitivity of spectroscopic ellipsometry data to multilayer model parameters is shown to be a strong function of the angle of incidence. A quantitative study of sensitivity versus angle of incidence is performed for a GaAs-AlxGa1-xAs-GaAs substrate structure, showing that maximum sensitivity to layer thicknesses and AlGaAs composition occurs near the wavelength-dependent principal angle. These results are verified by experimental measurements on two molecular-beam epitaxy grown samples. New spectral features, not found in previous ellipsometry studies of similar structures, are also reported.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 3293-3302 |
| Number of pages | 10 |
| Journal | Journal of Applied Physics |
| Volume | 60 |
| Issue number | 9 |
| DOIs | |
| State | Published - 1986 |
ASJC Scopus subject areas
- Physics and Astronomy(all)
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Snyder, P. G., Rost, M. C., Bu-Abbud, G. H., Woollam, J. A., & Alterovitz, S. A. (1986). Variable angle of incidence spectroscopic ellipsometry: Application to GaAs-AlxGa1-xAs multiple heterostructures. Journal of Applied Physics, 60(9), 3293-3302. https://doi.org/10.1063/1.337695