Abstract
The sensitivity of spectroscopic ellipsometry data to multilayer model parameters is shown to be a strong function of the angle of incidence. A quantitative study of sensitivity versus angle of incidence is performed for a GaAs-AlxGa1-xAs-GaAs substrate structure, showing that maximum sensitivity to layer thicknesses and AlGaAs composition occurs near the wavelength-dependent principal angle. These results are verified by experimental measurements on two molecular-beam epitaxy grown samples. New spectral features, not found in previous ellipsometry studies of similar structures, are also reported.
Original language | English (US) |
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Pages (from-to) | 3293-3302 |
Number of pages | 10 |
Journal | Journal of Applied Physics |
Volume | 60 |
Issue number | 9 |
DOIs | |
State | Published - 1986 |
ASJC Scopus subject areas
- General Physics and Astronomy