Variable angle of incidence spectroscopic ellipsometry: Application to GaAs-AlxGa1-xAs multiple heterostructures

Paul G. Snyder; Martin C. Rost; George H. Bu-Abbud; John A. Woollam; Samuel A. Alterovitz

doi:10.1063/1.337695

Variable angle of incidence spectroscopic ellipsometry: Application to GaAs-Al_xGa_1-xAs multiple heterostructures

Paul G. Snyder, Martin C. Rost, George H. Bu-Abbud, John A. Woollam, Samuel A. Alterovitz

Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

105 Scopus citations

Abstract

The sensitivity of spectroscopic ellipsometry data to multilayer model parameters is shown to be a strong function of the angle of incidence. A quantitative study of sensitivity versus angle of incidence is performed for a GaAs-Al_xGa_1-xAs-GaAs substrate structure, showing that maximum sensitivity to layer thicknesses and AlGaAs composition occurs near the wavelength-dependent principal angle. These results are verified by experimental measurements on two molecular-beam epitaxy grown samples. New spectral features, not found in previous ellipsometry studies of similar structures, are also reported.

Original language	English (US)
Pages (from-to)	3293-3302
Number of pages	10
Journal	Journal of Applied Physics
Volume	60
Issue number	9
DOIs	https://doi.org/10.1063/1.337695
State	Published - 1986

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1063/1.337695

Fingerprint Dive into the research topics of 'Variable angle of incidence spectroscopic ellipsometry: Application to GaAs-Al<sub>x</sub>Ga<sub>1-x</sub>As multiple heterostructures'. Together they form a unique fingerprint.

Cite this

@article{3b76a171c27c42a7a33e9fcc5c622d30,

title = "Variable angle of incidence spectroscopic ellipsometry: Application to GaAs-AlxGa1-xAs multiple heterostructures",

abstract = "The sensitivity of spectroscopic ellipsometry data to multilayer model parameters is shown to be a strong function of the angle of incidence. A quantitative study of sensitivity versus angle of incidence is performed for a GaAs-AlxGa1-xAs-GaAs substrate structure, showing that maximum sensitivity to layer thicknesses and AlGaAs composition occurs near the wavelength-dependent principal angle. These results are verified by experimental measurements on two molecular-beam epitaxy grown samples. New spectral features, not found in previous ellipsometry studies of similar structures, are also reported.",

author = "Snyder, {Paul G.} and Rost, {Martin C.} and Bu-Abbud, {George H.} and Woollam, {John A.} and Alterovitz, {Samuel A.}",

year = "1986",

doi = "10.1063/1.337695",

language = "English (US)",

volume = "60",

pages = "3293--3302",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "9",

}

TY - JOUR

T1 - Variable angle of incidence spectroscopic ellipsometry

T2 - Application to GaAs-AlxGa1-xAs multiple heterostructures

AU - Snyder, Paul G.

AU - Rost, Martin C.

AU - Bu-Abbud, George H.

AU - Woollam, John A.

AU - Alterovitz, Samuel A.

PY - 1986

Y1 - 1986

N2 - The sensitivity of spectroscopic ellipsometry data to multilayer model parameters is shown to be a strong function of the angle of incidence. A quantitative study of sensitivity versus angle of incidence is performed for a GaAs-AlxGa1-xAs-GaAs substrate structure, showing that maximum sensitivity to layer thicknesses and AlGaAs composition occurs near the wavelength-dependent principal angle. These results are verified by experimental measurements on two molecular-beam epitaxy grown samples. New spectral features, not found in previous ellipsometry studies of similar structures, are also reported.

AB - The sensitivity of spectroscopic ellipsometry data to multilayer model parameters is shown to be a strong function of the angle of incidence. A quantitative study of sensitivity versus angle of incidence is performed for a GaAs-AlxGa1-xAs-GaAs substrate structure, showing that maximum sensitivity to layer thicknesses and AlGaAs composition occurs near the wavelength-dependent principal angle. These results are verified by experimental measurements on two molecular-beam epitaxy grown samples. New spectral features, not found in previous ellipsometry studies of similar structures, are also reported.

UR - http://www.scopus.com/inward/record.url?scp=0009790797&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0009790797&partnerID=8YFLogxK

U2 - 10.1063/1.337695

DO - 10.1063/1.337695

M3 - Article

AN - SCOPUS:0009790797

VL - 60

SP - 3293

EP - 3302

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 9

ER -