Variable angle spectroscopic ellipsometry in the vacuum ultraviolet

John A. Woollam, James N. Hilfiker, Thomas E. Tiwald, Corey L. Bungay, Ron A. Synowicki, Duane E. Meyer, Craig M. Herzinger, Galen L. Pfeiffer, Gerald T. Cooney, Steven E. Green

Research output: Contribution to journalConference articlepeer-review

15 Scopus citations


Optical properties of thin films and bulk materials at short wavelengths, including 157 nm and shorter, are needed for development of new lithographic processes, new fundamental science, and new metrology in the semiconductor, optical and data storage industries. Variable angle spectroscopic ellipsometry offers non-destructive and precise measurement of thin film thickness and refractive index in the wavelength range from 140 nm to 1700 nm (0.73 eV to 8.9 eV). The addition of short wavelengths allows analysis of multilayer dielectric stacks, often difficult to do using visible spectroscopy alone. Another major application is in study of wide bandgap materials such as SiC and GaN related compound semiconductors for blue lasers and detectors. This paper reviews the present status of spectroscopic ellipsometry applications in the vacuum ultraviolet.

Original languageEnglish (US)
Pages (from-to)197-205
Number of pages9
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - 2000
Externally publishedYes
EventOptical Metrology Roadmap for the Semiconductor, Optical, and Data Storage Industries - San Diego, CA, USA
Duration: Jul 30 2000Jul 31 2000

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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