Vertical 3-D integration of silicon waveguides in a Si-SiO2-Si-SiO2-Si structure

Richard A. Soref; Fereydoon Namavar; Elisabetta Cortesi; Lionel Friedman; Richard Lareau

doi:10.1117/12.25543

Vertical 3-D integration of silicon waveguides in a Si-SiO₂-Si-SiO₂-Si structure

Richard A. Soref, Fereydoon Namavar, Elisabetta Cortesi, Lionel Friedman, Richard Lareau

Orthopaedic Surgery & Rehabilitation

Research output: Contribution to journal › Conference article › peer-review

5 Scopus citations

Abstract

We have built and tested new multiple-layer silicon optical waveguide structures that have applications in wafer-scale optical interconnects. A repeated sequence of oxygen implantation, annealing, and Si epitaxy was used to make 5-layer or 6-layer structures containing a pair of 2-μm-thick Si waveguide cores separated by 1200Å or 3700Å of SiO₂. Coupled or uncoupled dual waveguiding at 1.3 μm was observed. Inter-guide coupling for this stacked, 3-D structure is analyzed here. Applications to all-silicon guided-wave optical interconnects are discussed.

Original language	English (US)
Pages (from-to)	408-421
Number of pages	14
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	1389
DOIs	https://doi.org/10.1117/12.25543
State	Published - Apr 1 1991
Event	Microelectronic Interconnects and Packages: Optical and Electrical Technologies 1990 - Boston, United States Duration: Nov 4 1990 → Nov 9 1990

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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title = "Vertical 3-D integration of silicon waveguides in a Si-SiO2-Si-SiO2-Si structure",

abstract = "We have built and tested new multiple-layer silicon optical waveguide structures that have applications in wafer-scale optical interconnects. A repeated sequence of oxygen implantation, annealing, and Si epitaxy was used to make 5-layer or 6-layer structures containing a pair of 2-μm-thick Si waveguide cores separated by 1200{\AA} or 3700{\AA} of SiO2. Coupled or uncoupled dual waveguiding at 1.3 μm was observed. Inter-guide coupling for this stacked, 3-D structure is analyzed here. Applications to all-silicon guided-wave optical interconnects are discussed.",

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T1 - Vertical 3-D integration of silicon waveguides in a Si-SiO2-Si-SiO2-Si structure

AU - Soref, Richard A.

AU - Namavar, Fereydoon

AU - Cortesi, Elisabetta

AU - Friedman, Lionel

AU - Lareau, Richard

PY - 1991/4/1

Y1 - 1991/4/1

N2 - We have built and tested new multiple-layer silicon optical waveguide structures that have applications in wafer-scale optical interconnects. A repeated sequence of oxygen implantation, annealing, and Si epitaxy was used to make 5-layer or 6-layer structures containing a pair of 2-μm-thick Si waveguide cores separated by 1200Å or 3700Å of SiO2. Coupled or uncoupled dual waveguiding at 1.3 μm was observed. Inter-guide coupling for this stacked, 3-D structure is analyzed here. Applications to all-silicon guided-wave optical interconnects are discussed.

AB - We have built and tested new multiple-layer silicon optical waveguide structures that have applications in wafer-scale optical interconnects. A repeated sequence of oxygen implantation, annealing, and Si epitaxy was used to make 5-layer or 6-layer structures containing a pair of 2-μm-thick Si waveguide cores separated by 1200Å or 3700Å of SiO2. Coupled or uncoupled dual waveguiding at 1.3 μm was observed. Inter-guide coupling for this stacked, 3-D structure is analyzed here. Applications to all-silicon guided-wave optical interconnects are discussed.

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JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Microelectronic Interconnects and Packages: Optical and Electrical Technologies 1990

Y2 - 4 November 1990 through 9 November 1990

ER -

Vertical 3-D integration of silicon waveguides in a Si-SiO₂-Si-SiO₂-Si structure

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