Abstract
A new Si02-Si-Si02-Si-Si02-Si structure produced by the SIMOX process is used for dual, vertically integrated waveguiding in silicon at X = 1.3 pm. Independent waveguiding is observed when 2-pm-thick Si cores are separated by 0.36-pm-thick Si02. Coupled waveguiding is found for an 0.12 pm intercore oxide thickness.
Original language | English (US) |
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Pages (from-to) | 22-24 |
Number of pages | 3 |
Journal | IEEE Photonics Technology Letters |
Volume | 3 |
Issue number | 1 |
DOIs | |
State | Published - Jan 1991 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering